DMN2053UVT-7 Dual N-Channel MOSFET with 20V drain-source voltage and 4.6A continuous drain current. Features low on-resistance of 35mΩ at 4.5V and is packaged in a surface-mount TSOT-26.
Mfr Part #:

DMN2053UVT-7

Available from 1 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
Dual N-Channel MOSFET with 20V drain-source voltage and 4.6A continuous drain current. Features low on-resistance of 35mΩ at 4.5V and is packaged in a surface-mount TSOT-26.
✓ Total Stock: 9,000 pcs
$ Price Range: $0.11 - $0.12

DMN2053UVT-7 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
9,000 pcs
9000 pcs On Request 1 On Request On Request On Request On Request On Request

DMN2053UVT-7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Termination Style
Vgs(th) (Max) @ Id

DMN2053UVT-7 Description

Short technical summary and product information.

The DMN2053UVT-7 is a dual N-channel enhancement mode MOSFET from Diodes Incorporated. It is designed for high-efficiency power management applications, offering low on-state resistance and fast switching performance.

 

This device features a drain-source voltage of 20V and can handle continuous drain currents up to 4.6A at 25°C ambient with VGS=4.5V. The on-resistance is typically 35mΩ at VGS=4.5V and 43mΩ at VGS=2.5V. It has low input capacitance (369pF) and low gate charge (3.6nC), enabling efficient switching.

 

The MOSFET is housed in a compact TSOT-26 surface-mount package, which is 'Green' and RoHS compliant. It is rated for operating junction temperatures from -55°C to 150°C. Typical applications include backlighting, DC-DC converters, and general power management functions.

DMN2053UVT-7 Quick Information

Product Type: Dual N-Channel MOSFET Array
Canonical Name: DMN2053UVT-7, Dual N-Channel MOSFET, 20V, 4.6A, TSOT26
Subcategory: Dual N-Channel MOSFET

DMN2053UVT-7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Lead Free

DMN2053UVT-7 Estimated Pricing

Qty Low High
5+ $0.12 $0.12
50+ $0.12 $0.12
150+ $0.11 $0.11
500+ $0.11 $0.11

Estimated market price range - modelled values for guidance only, not live distributor offers.

DMN2053UVT-7 Features

  • Low on-resistance of 35mΩ at 4.5V.
  • Low input capacitance for efficient switching.
  • Dual N-channel in compact TSOT-26 package.
  • RoHS3 compliant and halogen-free device.
  • Rated for 20V drain-source voltage.

DMN2053UVT-7 Applications

  • Commonly used in backlighting applications.
  • Ideal for DC-DC converter circuits.
  • Used in power management functions.

DMN2053UVT-7 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

The drain-source voltage (Vdss) is 20V.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

What is the package type?

The device is packaged in a TSOT-26 (SOT-23-6 Thin) surface-mount package.

Is the device RoHS compliant?

Yes, the DMN2053UVT-7 is RoHS3 compliant, totally lead-free, and halogen-free.

What is the continuous drain current rating?

The continuous drain current is 4.6A at 25°C ambient with VGS=4.5V, and 4.2A at VGS=2.5V.

What is the typical on-resistance?

The on-resistance is 35mΩ maximum at VGS=4.5V and 43mΩ maximum at VGS=2.5V.

What is the gate charge?

The maximum gate charge (Qg) is 3.6nC at VGS=4.5V.

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