| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
9,000 pcs
|
9000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Termination Style | |
| Vgs(th) (Max) @ Id |
The DMN2053UVT-7 is a dual N-channel enhancement mode MOSFET from Diodes Incorporated. It is designed for high-efficiency power management applications, offering low on-state resistance and fast switching performance.
This device features a drain-source voltage of 20V and can handle continuous drain currents up to 4.6A at 25°C ambient with VGS=4.5V. The on-resistance is typically 35mΩ at VGS=4.5V and 43mΩ at VGS=2.5V. It has low input capacitance (369pF) and low gate charge (3.6nC), enabling efficient switching.
The MOSFET is housed in a compact TSOT-26 surface-mount package, which is 'Green' and RoHS compliant. It is rated for operating junction temperatures from -55°C to 150°C. Typical applications include backlighting, DC-DC converters, and general power management functions.
| Qty | Low | High |
|---|---|---|
| 5+ | $0.12 | $0.12 |
| 50+ | $0.12 | $0.12 |
| 150+ | $0.11 | $0.11 |
| 500+ | $0.11 | $0.11 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vdss) is 20V.
The operating junction temperature range is -55°C to 150°C.
The device is packaged in a TSOT-26 (SOT-23-6 Thin) surface-mount package.
Yes, the DMN2053UVT-7 is RoHS3 compliant, totally lead-free, and halogen-free.
The continuous drain current is 4.6A at 25°C ambient with VGS=4.5V, and 4.2A at VGS=2.5V.
The on-resistance is 35mΩ maximum at VGS=4.5V and 43mΩ maximum at VGS=2.5V.
The maximum gate charge (Qg) is 3.6nC at VGS=4.5V.