DMN2041LSD-13

The DMN2041LSD-13 is a dual N-channel enhancement mode MOSFET from Diodes Incorporated, designed for high-efficiency power management applications. It features low on-resistance (28 mΩ at VGS=4.5V), low gate threshold voltage (1.2V), and low input capacitance (550 pF). The device is rated for a maximum drain-source voltage of 20V and continuous drain current of 7.63A at TA=25°C (4.92A at TA=85°C). Pulsed drain current capability is 30A. Power dissipation is 1.16W at TA=25°C with a junction-to-ambient thermal resistance of 107.4°C/W. Gate charge is 15.6 nC, enabling efficient high-frequency switching. The operating temperature range is -55°C to +150°C. This MOSFET is housed in an industry-standard SO-8 package (surface mount), with matte tin termination finish. It is fully RoHS3 compliant, lead-free, halogen-free, and qualified to AEC-Q101 standards. Typical applications include power management functions and DC-DC converters. The logic level gate drive capability allows direct interfacing with low-voltage controllers.