| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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40,020 pcs
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40020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
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| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Vgs (Max) | |
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The DMN2040U-7 is an N-channel enhancement mode MOSFET from Diodes Incorporated. It is designed for low on-state resistance and fast switching in high-efficiency power management applications. The device is rated for a maximum drain-to-source voltage of 20 V and a continuous drain current of 6 A at +25°C. Pulsed drain current capability reaches 30 A with a 10 μs pulse at 1% duty cycle.
The MOSFET specifies a maximum drain-source on-resistance of 25 mOhm at VGS = 4.5 V and 33 mOhm at VGS = 2.5 V, making it suitable for both 4.5 V and 2.5 V logic-level gate drive. Gate threshold voltage is 1.2 V maximum, and gate charge is 7.5 nC at VGS = 4.5 V. Input capacitance is 667 pF at VDS = 10 V. Maximum power dissipation is 800 mW at +25°C ambient, and operating junction temperature ranges from -55°C to +150°C.
The DMN2040U-7 is housed in a SOT23 surface-mount package with matte tin annealed over a copper leadframe. It is available in tape and reel packaging with 3000 units per reel. The component is RoHS3 compliant, lead-free, and halogen and antimony free, with moisture sensitivity level 1 per J-STD-020.
The maximum drain-to-source voltage is 20 V.
The DMN2040U-7 is available in a SOT23 surface-mount package.
The operating junction temperature range is -55°C to 150°C.
Yes, the DMN2040U-7 is RoHS3 compliant and totally lead-free, and it is also halogen and antimony free.
The maximum continuous drain current is 6 A at +25°C ambient.
The maximum drain-source on-resistance is 25 mOhm at VGS = 4.5V.
The device supports gate drive voltages of 2.5V and 4.5V.