DMN2028USS-13 The DMN2028USS-13 is an N-Channel enhancement mode MOSFET from Diodes Incorporated. It features a 20V drain-source voltage and 7.3A continuous drain current in an SO-8 surface mount package.
Mfr Part #:

DMN2028USS-13

Available from 1 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
The DMN2028USS-13 is an N-Channel enhancement mode MOSFET from Diodes Incorporated. It features a 20V drain-source voltage and 7.3A continuous drain current in an SO-8 surface mount package.
✓ Total Stock: 10,000 pcs

DMN2028USS-13 Available from 1 distributor

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10000 pcs On Request 1 On Request On Request 24+ On Request On Request

DMN2028USS-13 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape Width
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
Weight

DMN2028USS-13 Description

Short technical summary and product information.

The DMN2028USS-13 is a 20V N-Channel enhancement mode MOSFET designed for high efficiency power management applications. It offers a low on-state resistance of 20 mOhm at VGS = 4.5V and 28 mOhm at VGS = 2.5V, enabling efficient switching and reduced power losses. The device is qualified to AEC-Q101 standards for high reliability and is fully RoHS compliant, lead-free, and halogen and antimony free.

 

Key electrical characteristics include a maximum drain current of 9.8A at 25°C and 7.9A at 70°C, with a pulsed drain current rating of 45A. The gate threshold voltage is 1.3V maximum at 250µA, and the total gate charge is 11.6 nC at 4.5V, supporting fast switching speeds. The input capacitance is 1000 pF at VDS = 10V.

 

The MOSFET is housed in an SO-8 surface mount package with matte tin annealed over copper leadframe terminals. It is moisture sensitivity level 1 per J-STD-020 and is solderable per MIL-STD-202, Method 208. The device is supplied on 13-inch reels with 2500 units per reel.

DMN2028USS-13 Quick Information

Product Type: MOSFET
Canonical Name: DMN2028USS-13
Subcategory: Single N-Channel

DMN2028USS-13 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead-Free

DMN2028USS-13 Features

  • N-Channel enhancement mode MOSFET design.
  • Low on-resistance of 20 mOhm at 4.5V.
  • Qualified to AEC-Q101 high reliability standards.
  • RoHS compliant and halogen and antimony free.
  • Surface mount SO-8 package for compact designs.

DMN2028USS-13 Applications

  • Ideal for battery charging circuits.
  • Used in DC-DC converter applications.
  • Suitable for power management functions.
  • Designed for portable power adaptors.

DMN2028USS-13 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the DMN2028USS-13?

The maximum drain-source voltage (Vdss) is 20V.

What is the continuous drain current rating at 25°C?

The continuous drain current (Id) at TA = +25°C with VGS = 4.5V is 9.8A maximum.

What is the on-resistance of the DMN2028USS-13?

The maximum on-resistance (Rds on) is 20 mOhm at ID = 9.4A and VGS = 4.5V, and 28 mOhm at VGS = 2.5V.

What package does the DMN2028USS-13 come in?

The DMN2028USS-13 is available in an SO-8 surface mount package.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

Is the DMN2028USS-13 RoHS compliant?

Yes, the DMN2028USS-13 is fully RoHS compliant and lead-free.

What is the gate threshold voltage?

The maximum gate threshold voltage (Vgs(th)) is 1.3V at ID = 250µA.

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