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DMN2025UFDB-7 Dual 20V N-channel enhancement mode MOSFET in a compact U-DFN2020-6 package. Supports 6A continuous drain current with low on-resistance of 25mOhm.
Mfr Part #:

DMN2025UFDB-7

Available from 1 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
Dual 20V N-channel enhancement mode MOSFET in a compact U-DFN2020-6 package. Supports 6A continuous drain current with low on-resistance of 25mOhm.
✓ Total Stock: 178,020 pcs

DMN2025UFDB-7 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
178,020 pcs
On Request
178020 pcs On Request 1 On Request On Request On Request On Request On Request
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DMN2025UFDB-7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Termination Finish
Vgs(th) (Max) @ Id
Weight
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DMN2025UFDB-7 Description

Short technical summary and product information.

The DMN2025UFDB-7 is a dual 20V N-channel enhancement mode MOSFET from Diodes Incorporated, designed for low on-state resistance and superior switching performance. It is suitable for high-efficiency power management applications including battery management, DC-DC converters, and general power management functions.

 

Key electrical specifications include a drain-to-source voltage (Vdss) of 20V, continuous drain current of 6A at 25°C, and maximum on-resistance of 25mOhm at Vgs=4.5V and 31mOhm at Vgs=2.5V. The gate threshold voltage is 1V max at 250µA. Gate charge is 12.3nC at 10V, and input capacitance is 486pF at 10V. Maximum power dissipation is 700mW at 25°C ambient.

 

Packaged in a 6-UDFN exposed pad case (U-DFN2020-6 Type B), the device is surface mountable, RoHS3 compliant, halogen- and antimony-free, and MSL level 1. Terminal finish is NiPdAu over copper leadframe. The device is totally lead-free and fully RoHS compliant.

DMN2025UFDB-7 Quick Information

Product Type: Dual N-Channel MOSFET
Canonical Name: DMN2025UFDB-7 Dual 20V N-Channel MOSFET
Subcategory: Dual N-Channel

DMN2025UFDB-7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead Free

DMN2025UFDB-7 Features

  • Dual 20V N-channel enhancement mode MOSFET.
  • Low on-resistance: 25mOhm at 4.5V gate drive.
  • Compact U-DFN2020-6 package, 0.6mm profile.
  • RoHS3 compliant, halogen- and antimony-free.
  • ESD protected gate for robust operation.

DMN2025UFDB-7 Applications

  • Suitable for battery management applications.
  • Ideal for power management functions in portable devices.
  • Used in DC-DC converter circuits.
  • Perfect for low-profile, space-constrained designs.

DMN2025UFDB-7 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage of the DMN2025UFDB-7?

20V.

What is the package type?

6-UDFN Exposed Pad (U-DFN2020-6 Type B).

What is the operating temperature range?

-55°C to 150°C.

Is the DMN2025UFDB-7 RoHS compliant?

Yes, RoHS3 compliant.

What is the maximum continuous drain current?

6A at 25°C ambient.

What is the gate threshold voltage?

1V max at 250µA.

What is the typical on-resistance?

25mOhm at Vgs=4.5V, Id=4A.

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