| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
28,020 pcs
|
28020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The DMN2024U-7 is an N-Channel Enhancement Mode MOSFET designed for high-efficiency power management applications. It offers a maximum drain-source voltage of 20V and a continuous drain current of 6.8A at 25°C. The device features low on-resistance of 25mΩ at VGS=4.5V and 29mΩ at VGS=2.5V, enabling efficient switching and reduced power losses. With low input capacitance (647pF at 10V) and low gate charge (7.1nC at 4.5V), the DMN2024U-7 provides fast switching performance suitable for DC-DC converters, motor control, and backlighting applications. The MOSFET is housed in a SOT23 surface-mount package, which is compact and suitable for space-constrained designs. It is fully RoHS compliant and halogen-free, meeting environmental standards. The device also features an ESD protected gate for enhanced reliability.
20V.
SOT23.
Yes, it is fully RoHS compliant and halogen-free.
6.8A at TA=25°C.
25mΩ at VGS=4.5V, 29mΩ at VGS=2.5V.
647pF at VDS=10V.
7.1nC at VGS=4.5V.