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DMN2023UCB4-7 Dual N-Channel Common Drain MOSFET from Diodes Incorporated. Rated for 24V drain-source voltage and 6A continuous current, in a compact X1-WLB1818-4 surface mount package.
Mfr Part #:

DMN2023UCB4-7

Available from 2 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
Dual N-Channel Common Drain MOSFET from Diodes Incorporated. Rated for 24V drain-source voltage and 6A continuous current, in a compact X1-WLB1818-4 surface mount package.
✓ Total Stock: 67,020 pcs

DMN2023UCB4-7 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
PROSOFT ELECTRONICS ✓
Non-Authorised Inventory information
51,000 pcs
On Request
51000 pcs On Request 1 On Request On Request On Request On Request On Request
Optech Co.,Limited ✓
Non-Authorised Inventory information
16,020 pcs
On Request
16020 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

DMN2023UCB4-7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
ESD Protection
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Supplier Device Package
Technology
Vgs(th) (Max) @ Id
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DMN2023UCB4-7 Description

Short technical summary and product information.

This dual N-channel enhancement mode MOSFET with common drain configuration is designed for low on-state resistance. It features a 24V source-source breakdown voltage, 6A continuous source current at 25°C, and 20A pulsed current. The device has a low gate threshold voltage of 1.3V max and input capacitance of 3333pF. It includes built-in ESD protection up to 2kV HBM. The MOSFET is surface mounted in a 4-XFBGA WLBGA package (X1-WLB1818-4). It is qualified to AEC-Q101 standards for automotive reliability. The operating temperature range is -55°C to 150°C. The device is RoHS compliant and halogen-free. Applications include battery management, load switching, and battery protection.

DMN2023UCB4-7 Quick Information

Product Type: MOSFET Array
Canonical Name: DMN2023UCB4-7 N-Channel Enhancement Mode Field Effect Transistor (MOSFET)
Subcategory: Dual N-Channel MOSFET Array

DMN2023UCB4-7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Totally Lead-Free

DMN2023UCB4-7 Features

  • Dual N-channel common drain configuration.
  • Low on-state resistance 26mΩ at 4.5V.
  • Built-in ESD protection to 2kV HBM.
  • AEC-Q101 qualified for automotive use.
  • Surface mount X1-WLB1818-4 package.

DMN2023UCB4-7 Applications

  • Ideal for battery management systems.
  • Used in load switch applications.
  • Suitable for battery protection circuits.

DMN2023UCB4-7 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

The drain to source voltage (Vdss) is 24 V.

What is the continuous source current rating?

The continuous source current is 6.0 A at TA = +25°C.

What is the package type?

The package is X1-WLB1818-4 (4-XFBGA, WLBGA).

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

Is the device RoHS compliant?

Yes, it is RoHS3 compliant (totally lead-free and fully RoHS compliant).

Does it include ESD protection?

Yes, it has a built-in gate-source protection diode rated for 2kV HBM.

Is the device qualified for automotive applications?

Yes, it is qualified to AEC-Q101 standards for high reliability.

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