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DMN2016LHAB-7 Dual N-Channel Enhancement Mode MOSFET, 20V drain-source voltage, 7.5A continuous drain current, 15.5mOhm typical on-resistance, in a 6-UDFN surface mount package.
Mfr Part #:

DMN2016LHAB-7

Available from 2 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
Dual N-Channel Enhancement Mode MOSFET, 20V drain-source voltage, 7.5A continuous drain current, 15.5mOhm typical on-resistance, in a 6-UDFN surface mount package.
✓ Total Stock: 3,296 pcs

DMN2016LHAB-7 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Smaxon Electronics ✓
Non-Authorised Inventory information
2,363 pcs
On Request
2363 pcs On Request 1 On Request On Request 18+ On Request On Request
Rayichip ✓
Non-Authorised Inventory information
933 pcs
On Request
933 pcs On Request 1 On Request On Request On Request On Request On Request
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DMN2016LHAB-7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs(th) (Max) @ Id
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DMN2016LHAB-7 Description

Short technical summary and product information.

The DMN2016LHAB-7 is a dual N-channel enhancement mode MOSFET from Diodes Incorporated, designed for high-efficiency power management applications. It features two common-drain N-channel MOSFETs in a compact 6-pin U-DFN2030-6 exposed pad package.

 

Key electrical ratings include a maximum drain-to-source voltage of 20V and a continuous drain current of 7.5A at 25°C (5.8A at 70°C). The device offers low on-resistance down to 15.5mOhm at Vgs=4.5V, with logic-level gate drive capability (Vgs(th) max 1.1V). Pulsed drain current can reach 45A, and gate charge is 16nC.

 

The MOSFET is surface-mountable with a lead-free, halogen-free green molding compound. It is rated for operation from -55°C to +150°C junction temperature and has a moisture sensitivity level of 1 per J-STD-020. Typical applications include power management functions, battery packs, and load switches.

DMN2016LHAB-7 Quick Information

Product Type: MOSFET Array
Canonical Name: DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Subcategory: Dual N-Channel Common Drain

DMN2016LHAB-7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead Free

DMN2016LHAB-7 Features

  • Dual N-channel common-drain MOSFET.
  • 20V drain-to-source voltage rating.
  • 7.5A continuous drain current at 25°C.
  • Low 15.5mOhm on-resistance at 4.5V.
  • Logic-level gate threshold voltage.

DMN2016LHAB-7 Applications

  • Ideal for power management functions.
  • Used in battery pack protection circuits.
  • Suitable for load switch applications.

DMN2016LHAB-7 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage (Vdss) of the DMN2016LHAB-7?

20 V.

What is the maximum continuous drain current at 25°C?

7.5 A (with Vgs=4.5V).

What is the on-resistance (Rds on) at 4.5V gate drive?

Maximum 15.5 mOhm at Id=4A, Vgs=4.5V.

What package does the DMN2016LHAB-7 come in?

6-UDFN Exposed Pad (supplier package U-DFN2030-6 Type B).

What is the operating temperature range?

-55°C to 150°C (junction temperature).

Is the DMN2016LHAB-7 RoHS compliant?

Yes, the datasheet states it is totally lead-free and fully RoHS compliant.

What is the gate threshold voltage?

Maximum 1.1 V at Id=250µA.

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