| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,363 pcs
|
2363 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request | |
|
933 pcs
|
933 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Continuous Drain Current (Maximum @ VGS=4.5 V, TA=25 °C) | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Pulsed Drain Current | |
| Rds On (Max) @ Id, Vgs | |
| Standard Package Quantity | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id | |
| continuous_drain_current (Maximum @ VGS=4.5 V, TA=+70 °C) | |
| continuous_drain_current (Maximum @ t<10 s, VGS=4.5 V, TA=+25 °C) | |
| continuous_drain_current (Maximum @ t<10 s, VGS=4.5 V, TA=+70 °C) | |
| drain_source_on_resistance (Maximum @ Id=4 A, Vgs=1.8 V) | |
| drain_source_on_resistance (Maximum @ Id=4 A, Vgs=2.5 V) | |
| drain_source_on_resistance (Maximum @ Id=4 A, Vgs=3.1 V) | |
| drain_source_on_resistance (Maximum @ Id=4 A, Vgs=4.0 V) | |
| power_dissipation (Maximum @ Note 6, Ta=25 °C) | |
| power_dissipation (Maximum @ TA=70 °C) | |
| thermal_resistance_junction_ambient (Maximum @ Steady State) | |
| thermal_resistance_junction_ambient (Maximum @ t<10 s) |
The DMN2016LHAB-7 is a dual N-channel enhancement mode MOSFET from Diodes Incorporated, designed for high-efficiency power management applications. It features two common-drain N-channel MOSFETs in a compact 6-pin U-DFN2030-6 exposed pad package.
Key electrical ratings include a maximum drain-to-source voltage of 20V and a continuous drain current of 7.5A at 25°C (5.8A at 70°C). The device offers low on-resistance down to 15.5mOhm at Vgs=4.5V, with logic-level gate drive capability (Vgs(th) max 1.1V). Pulsed drain current can reach 45A, and gate charge is 16nC.
The MOSFET is surface-mountable with a lead-free, halogen-free green molding compound. It is rated for operation from -55°C to +150°C junction temperature and has a moisture sensitivity level of 1 per J-STD-020. Typical applications include power management functions, battery packs, and load switches.
20 V.
7.5 A (with Vgs=4.5V).
Maximum 15.5 mOhm at Id=4A, Vgs=4.5V.
6-UDFN Exposed Pad (supplier package U-DFN2030-6 Type B).
-55°C to 150°C (junction temperature).
Yes, the datasheet states it is totally lead-free and fully RoHS compliant.
Maximum 1.1 V at Id=250µA.