DMN2016LFG-7 Dual N-channel enhancement mode MOSFET from Diodes Incorporated. Rated for 20V drain-source voltage and 5.2A continuous drain current with low on-resistance of 18mΩ at 4.5V gate drive.
Mfr Part #:

DMN2016LFG-7

Available from 1 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
Dual N-channel enhancement mode MOSFET from Diodes Incorporated. Rated for 20V drain-source voltage and 5.2A continuous drain current with low on-resistance of 18mΩ at 4.5V gate drive.
✓ Total Stock: 479 pcs
$ Price Range: $0.66

DMN2016LFG-7 Available from 1 distributor

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DMN2016LFG-7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
ESD Protection
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs(th) (Max) @ Id
Weight

DMN2016LFG-7 Description

Short technical summary and product information.

The DMN2016LFG-7 is a dual N-channel enhancement mode MOSFET from Diodes Incorporated, designed for low on-state resistance and efficient switching performance. It features a drain-source breakdown voltage of 20V and a continuous drain current of 5.2A at 25°C ambient temperature. The device offers a maximum on-resistance of 18mΩ at VGS = 4.5V and 30mΩ at VGS = 1.8V, making it suitable for low-voltage power management applications.

 

This MOSFET integrates two N-channel devices in a common drain configuration, with logic level gate drive capability. It includes ESD protection up to 2kV and features low input capacitance of 1472pF and total gate charge of 16nC at 4.5V, enabling fast switching. The gate threshold voltage ranges from 0.4V minimum to 1.1V maximum, with a typical value of 0.71V.

 

The device is qualified to AEC-Q101 standards for high reliability and is RoHS compliant, halogen free, and lead free. It is housed in a surface mount U-DFN3030-8 package (8-PowerUDFN) with a weight of 0.0172g. The operating temperature range is -55°C to +150°C, and it has a thermal resistance of 169°C/W junction-to-ambient and 15.8°C/W junction-to-case.

 

Typical applications include power management functions, battery pack protection, and load switching. The device is supplied in tape and reel packaging with 3000 units per reel.

DMN2016LFG-7 Quick Information

Product Type: MOSFET Array
Canonical Name: Dual N-Channel Enhancement Mode MOSFET, 20V, 5.2A, 8-PowerUDFN
Subcategory: Dual N-Channel

DMN2016LFG-7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Lead Free

DMN2016LFG-7 Features

  • Dual N-channel MOSFET in common drain configuration.
  • Low on-resistance: 18mΩ at 4.5V gate drive.
  • Logic level gate threshold voltage from 0.4V to 1.1V.
  • ESD protected gate up to 2kV.
  • AEC-Q101 qualified for automotive reliability.

DMN2016LFG-7 Applications

  • Power management functions in portable devices.
  • Battery pack protection and switching.
  • Load switching for low voltage rails.

DMN2016LFG-7 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

The drain-source breakdown voltage is 20V minimum.

What package does the DMN2016LFG-7 come in?

It is available in a surface mount U-DFN3030-8 (8-PowerUDFN) package.

What is the operating temperature range?

The operating temperature range is -55°C to +150°C.

Is the DMN2016LFG-7 RoHS compliant?

Yes, it is RoHS3 compliant, lead free, and halogen free.

What is the maximum continuous drain current?

The continuous drain current is 5.2A at 25°C ambient temperature.

What is the on-resistance at 1.8V gate drive?

The maximum on-resistance is 30mΩ at VGS=1.8V and ID=4A.

Is this MOSFET qualified for automotive applications?

Yes, it is qualified to AEC-Q101 standards for high reliability.

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