DMN2015UFDE-7 DMN2015UFDE-7 is an N-Channel enhancement mode MOSFET from Diodes Incorporated. It features a 20V drain-source breakdown voltage and a maximum continuous drain current of 10.5A.
Mfr Part #:

DMN2015UFDE-7

Available from 2 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
DMN2015UFDE-7 is an N-Channel enhancement mode MOSFET from Diodes Incorporated. It features a 20V drain-source breakdown voltage and a maximum continuous drain current of 10.5A.
✓ Total Stock: 26,631 pcs

DMN2015UFDE-7 Available from 2 distributors

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23,988 pcs
23988 pcs On Request 1 On Request On Request 13+ On Request On Request
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2,643 pcs
2643 pcs On Request 1 On Request On Request On Request On Request On Request

DMN2015UFDE-7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
Weight

DMN2015UFDE-7 Description

Short technical summary and product information.

The DMN2015UFDE-7 is an N-Channel enhancement mode MOSFET designed for high-efficiency power management applications. It offers a low on-state resistance of 11.6 mOhm at Vgs=4.5V and Id=8.5A, minimizing conduction losses. The device is housed in a compact 6-PowerUDFN (U-DFN2020-6 Type E) surface-mount package with a low 0.6mm profile and a PCB footprint of 4mm².

 

Key electrical specifications include a drain-source voltage (Vdss) of 20V, a maximum continuous drain current of 10.5A at Ta=25°C, and a gate threshold voltage of 1.1V at Id=250µA. The device is rated for operation over a junction temperature range of -55°C to 150°C and has a maximum power dissipation of 660mW at ambient temperature.

 

The DMN2015UFDE-7 is suitable for general-purpose interfacing switches and power management functions. It is fully RoHS3 compliant, lead-free, and halogen- and antimony-free, meeting modern environmental standards. The part is available in tape and reel packaging with a standard quantity of 3000 pieces per 7-inch reel.

DMN2015UFDE-7 Quick Information

Product Type: MOSFET
Canonical Name: DMN2015UFDE-7 N-Channel 20V 10.5A MOSFET
Subcategory: Single MOSFET

DMN2015UFDE-7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 - Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead-Free

DMN2015UFDE-7 Features

  • N-Channel enhancement mode MOSFET.
  • 20V drain-source breakdown voltage.
  • 10.5A maximum continuous drain current.
  • Low on-resistance of 11.6 mOhm.
  • Compact U-DFN2020-6 surface mount package.

DMN2015UFDE-7 Applications

  • General purpose interfacing switch.
  • Power management functions.
  • High-efficiency DC-DC converters.
  • Load switching applications.
  • Battery protection circuits.

DMN2015UFDE-7 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the DMN2015UFDE-7?

The maximum drain-source voltage (Vdss) is 20V.

What is the maximum continuous drain current of this MOSFET?

The maximum continuous drain current is 10.5A at Ta=25°C.

What is the on-resistance of the DMN2015UFDE-7?

The maximum on-resistance is 11.6 mOhm at Vgs=4.5V and Id=8.5A, and 15 mOhm at Vgs=2.5V.

What is the operating temperature range for this device?

The operating junction temperature range is -55°C to 150°C.

What package does the DMN2015UFDE-7 come in?

It comes in a 6-PowerUDFN surface-mount package, specifically the U-DFN2020-6 (Type E).

Is the DMN2015UFDE-7 RoHS compliant?

Yes, it is RoHS3 compliant and lead-free.

What is the gate threshold voltage of this MOSFET?

The maximum gate threshold voltage is 1.1V at Id=250µA.

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