| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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88,020 pcs
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88020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| ESD Protection | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
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The DMN2014LHAB-7 from Diodes Incorporated is a dual N-channel enhancement mode MOSFET designed to minimize on-state resistance while maintaining superior switching performance. Key electrical specifications include a 20V drain-source breakdown voltage, maximum continuous drain current of 9.0A at 25°C, and a low on-resistance of 13mOhm at Vgs=4.5V. It features a logic level gate with a maximum gate threshold voltage of 1.1V at 250µA, enabling direct drive from low-voltage controllers. The device includes ESD protected gate and is qualified to AEC-Q101 standards for high reliability automotive applications.
This MOSFET is suitable for power management functions, battery pack protection, and load switching in portable and automotive electronics. It is RoHS3 compliant, halogen and antimony free, and rated UL 94V-0 for flammability. The package is a compact U-DFN2030-6 (Type B) surface mount case measuring 2.0mm x 3.0mm, with a maximum power dissipation of 800mW at 25°C (steady state) and operating junction temperature range of -55°C to 150°C.
20V.
U-DFN2030-6 (Type B) surface mount package.
-55°C to 150°C (junction temperature).
Yes, it is RoHS3 compliant.
9.0A (steady state, Vgs=4.5V).
13mOhm maximum.
Yes, it is qualified to AEC-Q101 standards.