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DMN2013UFX-7 Dual N-Channel enhancement mode MOSFET from Diodes Incorporated. Rated for 20V drain-source voltage and 10A continuous drain current with low on-resistance of 11.5mOhm.
Mfr Part #:

DMN2013UFX-7

Available from 1 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
Dual N-Channel enhancement mode MOSFET from Diodes Incorporated. Rated for 20V drain-source voltage and 10A continuous drain current with low on-resistance of 11.5mOhm.
Total Stock: 1,955 pcs

DMN2013UFX-7 Available from 1 distributor

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1,955 pcs
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DMN2013UFX-7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain Current (Maximum @ Pulse width limited by max junction temperature)
Drain Current (Maximum @ VGS = 4.5 V, TA = +25 °C)
Drain Current (Maximum @ VGS=2.5 V, TA=25 °C)
Drain to Source Voltage (Vdss)
ESD Protection
Gate Charge (Qg) (Max) @ Vgs
Gate-Source Voltage
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
On Resistance (Maximum @ VGS=2.5 V)
Operating Temperature
Power
Power Dissipation (Maximum @ TA=25 °C, mounted on FR 4 board (Note 5)
Rds On (Max) @ Id, Vgs
Standard Package Quantity
Supplier Device Package
Tape & Reel
Technology
Thermal Resistance, Junction to Ambient (Maximum @ Note 5)
Thermal Resistance, Junction to Ambient (Maximum @ Note 6)
Vgs(th) (Max) @ Id
Weight

DMN2013UFX-7 Description

Short technical summary and product information.

The DMN2013UFX-7 is a dual N-channel enhancement mode MOSFET from Diodes Incorporated, designed to minimize on-state resistance while maintaining superior switching performance. It is ideal for high-efficiency power management applications. Key electrical specifications include a maximum drain-source voltage of 20V, continuous drain current of 10A at VGS=4.5V, and a low on-resistance of 11.5mOhm at VGS=4.5V. The device also features a gate threshold voltage of 1.1V, gate charge of 57.4nC, and input capacitance of 2607pF. The MOSFET is ESD protected and qualified to AEC-Q101 standards for high reliability. The package is a surface-mount W-DFN5020-6 (6-VFDFN Exposed Pad) with a weight of 0.03 grams. It is fully RoHS compliant, lead-free, and halogen and antimony free (green device). The operating junction temperature range is -55°C to 150°C. Thermal performance: maximum power dissipation is 0.78W on standard FR4 board and 2.14W on a 1-inch square copper pad.

DMN2013UFX-7 Quick Information

Product Type: Dual N-Channel MOSFET
Canonical Name: DMN2013UFX-7 Dual N-Channel Enhancement Mode MOSFET
Subcategory: Dual N-Channel MOSFET

DMN2013UFX-7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Lead-Free

DMN2013UFX-7 Features

  • Low on-resistance of 11.5 mOhm at 4.5V.
  • ESD protected for improved reliability.
  • RoHS compliant and lead-free.
  • Halogen and antimony free green device.
  • AEC-Q101 qualified for automotive applications.

DMN2013UFX-7 Applications

  • General purpose interfacing switch.
  • Power management functions in portable devices.
  • High-efficiency DC-DC converters.
  • Load switching in battery-powered systems.
  • Automotive electronics requiring AEC-Q101 qualification.

DMN2013UFX-7 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the DMN2013UFX-7?

The maximum drain-source voltage is 20V.

What is the package type for this MOSFET?

The package is 6-VFDFN Exposed Pad (W-DFN5020-6).

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

Is the DMN2013UFX-7 RoHS compliant?

Yes, it is fully RoHS compliant and lead-free as per the datasheet.

What is the continuous drain current rating?

At VGS=4.5V and TA=25°C, the continuous drain current is 10A; at VGS=2.5V it is 9A.

What is the on-resistance of the DMN2013UFX-7?

The maximum on-resistance is 11.5 mOhm at VGS=4.5V and ID=8.5A, and 14 mOhm at VGS=2.5V.

Does the MOSFET have ESD protection?

Yes, the datasheet states it is ESD protected.

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