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DMN2011UFX-7 Dual N-Channel enhancement mode MOSFET from Diodes Incorporated. Rated for 20V drain-source voltage and 12.2A continuous drain current with low on-resistance of 9.5mΩ at 4.5V gate drive.
Mfr Part #:

DMN2011UFX-7

Available from 2 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
Dual N-Channel enhancement mode MOSFET from Diodes Incorporated. Rated for 20V drain-source voltage and 12.2A continuous drain current with low on-resistance of 9.5mΩ at 4.5V gate drive.
✓ Total Stock: 18,177 pcs

DMN2011UFX-7 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Smaxon Electronics ✓
Non-Authorised Inventory information
11,900 pcs
On Request
11900 pcs On Request 1 On Request On Request 19+ On Request On Request
Optech Co.,Limited ✓
Non-Authorised Inventory information
6,277 pcs
On Request
6277 pcs On Request 1 On Request On Request /+ On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

DMN2011UFX-7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Termination Finish
Vgs(th) (Max) @ Id
Weight
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DMN2011UFX-7 Description

Short technical summary and product information.

The DMN2011UFX-7 is a dual N-channel enhancement mode MOSFET from Diodes Incorporated, designed to minimize on-state resistance while maintaining superior switching performance. It is ideal for high-efficiency power management applications such as general purpose interfacing switches and power management functions.

 

Key electrical specifications include a maximum drain-source voltage of 20V, continuous drain current of 12.2A at 25°C with 4.5V gate drive, and a maximum on-resistance of 9.5mΩ at VGS=4.5V. The device also features low input capacitance of 2248pF at VDS=10V and a gate threshold voltage of 1V max at ID=250µA. It is ESD protected and offers fast switching speed.

 

The MOSFET is housed in a compact V-DFN2050-4 package with exposed pad for improved thermal performance. It is surface mountable and supplied in tape and reel packaging with 3000 pieces per reel. The device is qualified to AEC-Q101 standards for high reliability automotive applications.

DMN2011UFX-7 Quick Information

Product Type: MOSFET Array
Canonical Name: DMN2011UFX-7 Dual N-Channel Enhancement Mode MOSFET Array, 20V Vds, 12.2A Id, V-DFN2050-4 Package
Subcategory: Dual N-Channel Enhancement Mode MOSFET

DMN2011UFX-7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 1 per J-STD-020
REACH Status: REACH Unaffected
Lead Free: Totally Lead-Free

DMN2011UFX-7 Features

  • Dual N-channel enhancement mode MOSFET.
  • 20V maximum drain-source voltage rating.
  • 12.2A continuous drain current at 25°C.
  • Low on-resistance of 9.5mΩ at 4.5V.
  • AEC-Q101 qualified for automotive reliability.

DMN2011UFX-7 Applications

  • General purpose interfacing switch applications.
  • Power management functions in portable devices.
  • High-efficiency DC-DC converter circuits.
  • Load switching in automotive electronic modules.
  • Battery protection and management systems.

DMN2011UFX-7 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the DMN2011UFX-7?

The maximum drain-source voltage (Vdss) is 20V.

What is the continuous drain current rating at 25°C?

The continuous drain current is 12.2A at VGS=4.5V and TA=25°C.

What is the on-resistance at VGS=4.5V?

The maximum on-resistance is 9.5mΩ at VGS=4.5V and ID=10A.

What package does the DMN2011UFX-7 come in?

It comes in a V-DFN2050-4 package (4-VFDFN exposed pad) for surface mount.

Is the DMN2011UFX-7 RoHS compliant?

Yes, it is RoHS3 compliant and totally lead-free.

What is the operating temperature range?

The operating junction temperature range is -55°C to +150°C.

Is this MOSFET qualified for automotive applications?

Yes, it is qualified to AEC-Q101 standards for high reliability.

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