Mfr Part #:

DMN2011UFDF-7

The DMN2011UFDF-7 is a 20V N-Channel enhancement mode MOSFET from Diodes Incorporated. It features low on-resistance of 9.5mOhm at 4.5V and is designed for high efficiency power management.

✓ Total Stock: 28,020 pcs

DMN2011UFDF-7 Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Optech Co.,Limited ✓ Non-Authorised Inventory information	28,020 pcs On Request	28020 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

DMN2011UFDF-7 Description

Short technical summary and product information.

The DMN2011UFDF-7 is a 20V N-Channel enhancement mode MOSFET manufactured by Diodes Incorporated. It is designed to minimize on-state resistance while maintaining superior switching performance, making it suitable for high efficiency power management applications.

Key electrical characteristics include a maximum drain-source voltage of 20V, continuous drain current of 11.7A at TA=25°C (datasheet value), and maximum on-resistance of 9.5mOhm at VGS=4.5V and 11mOhm at VGS=2.5V. The gate threshold voltage is 1V max at 250µA, and the total gate charge is 56nC at 10V. Input capacitance is 2248pF at VDS=10V. The device is ESD protected.

The MOSFET is housed in a U-DFN2020-6 (Type F) surface mount package with an exposed pad for thermal management. The case is molded plastic with UL 94V-0 flammability rating. It is lead-free, RoHS3 compliant, and halogen and antimony free. Moisture sensitivity level is 1 (unlimited).

Typical applications include general purpose interfacing switches and power management functions. The low profile (0.6mm) and small footprint (4mm²) make it ideal for space-constrained designs.

DMN2011UFDF-7 Quick Information

Product Type: MOSFET

Canonical Name: DMN2011UFDF-7 20V N-Channel MOSFET

Subcategory: Single

DMN2011UFDF-7 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): Level 1 (Unlimited)

REACH Status: REACH Unaffected

Lead Free: Lead-Free

DMN2011UFDF-7 Features

20V drain-source voltage rating.
Low on-resistance of 9.5mOhm.
ESD protected gate design.
Surface mount U-DFN2020-6 package.
RoHS3 compliant and lead-free.

DMN2011UFDF-7 Applications

General purpose interfacing switch applications.
Power management functions in portable devices.
High efficiency DC-DC converter designs.
Load switching in low voltage systems.

DMN2011UFDF-7 FAQs

7 frequently asked questions generated from this part’s specifications.

What is the drain-source voltage rating?

20V maximum.

What package does the DMN2011UFDF-7 come in?

U-DFN2020-6 (Type F) surface mount package.

What is the operating temperature range?

-55°C to 150°C (junction).

Is the DMN2011UFDF-7 RoHS compliant?

Yes, it is RoHS3 compliant and lead-free.

What is the on-resistance at 4.5V?

9.5mOhm maximum at VGS=4.5V, ID=7A.

What is the gate threshold voltage?

1V maximum at ID=250µA.

Is the device ESD protected?

Yes, it has an ESD protected gate.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	Diodes Incorporated
Current	14.2 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4.5V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	56 nC
Halogen Free	Halogen and Antimony Free, Green Device
Input Capacitance (Ciss) (Max) @ Vds	2248 pF
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Power Dissipation (Max)	2.1 W
Rds On (Max) @ Id, Vgs	9.5 mOhm
Supplier Device Package	U-DFN2020-6 (Type F)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±12 V
Vgs(th) (Max) @ Id	1 V
Weight	0.0065 g