| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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46,020 pcs
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46020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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2,077 pcs
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2077 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The DMN2009USS-13 is an N-Channel enhancement-mode MOSFET from Diodes Incorporated. It is designed for low voltage switching applications requiring high efficiency and small footprint.
Key electrical specifications include a drain-source voltage of 20V, continuous drain current of 12.1A at 25°C, and a maximum on-resistance of 8mOhm at Vgs=10V and Id=12A. The gate threshold voltage is 1.2V maximum, allowing logic-level drive. The device features a maximum gate charge of 34nC at Vgs=10V and input capacitance of 1706pF at Vds=10V.
The MOSFET is housed in an 8-SOIC surface mount package (0.154" width, 3.90mm width) with a supplier device package of 8-SO. Operating temperature range is -55°C to 150°C with a maximum power dissipation of 1.4W.
The drain-source voltage (Vdss) is 20V.
The MOSFET comes in an 8-SOIC surface mount package with 0.154" width and 3.90mm width.
The operating temperature range is -55°C to 150°C (junction).
Yes, it is marked as RoHS3 compliant, though this status is unverified.
The continuous drain current at 25°C is 12.1A.
The maximum on-resistance is 8mOhm at Vgs=10V and Id=12A.
The maximum gate threshold voltage is 1.2V at Id=250µA.