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DMN2009LSS13 The Diodes Incorporated DMN2009LSS13 is an N-channel MOSFET with a 20V drain-to-source voltage rating and 12A continuous drain current. It is housed in an SO-8 package.
Mfr Part #:

DMN2009LSS13

Available from 1 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
The Diodes Incorporated DMN2009LSS13 is an N-channel MOSFET with a 20V drain-to-source voltage rating and 12A continuous drain current. It is housed in an SO-8 package.
✓ Total Stock: 60 pcs
$ Price Range: $0.99

DMN2009LSS13 Available from 1 distributor

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✓ Non-Authorised
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60 pcs
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60 pcs On Request 1 On Request On Request On Request On Request On Request
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DMN2009LSS13 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Gate Charge
Input Capacitance
Mounting Type
Operating Temperature
Power Dissipation
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DMN2009LSS13 Description

Short technical summary and product information.

The Diodes Incorporated DMN2009LSS13 is an N-channel MOSFET designed for various electronic applications. It features a maximum power dissipation of 2W and an operating temperature range of -55℃ to +150℃.

 

Key electrical characteristics include a gate threshold voltage of 1.2V, a continuous drain current of 12A, and a drain-to-source voltage of 20V. The on-resistance (RDS(on)) is specified as 12mΩ at 2.5V, with an input capacitance (Ciss) of 2.555nF and a gate charge (Qg) of 28.3nC at 4.5V. The reverse transfer capacitance (Crss) is 496pF.

 

This component is supplied in an SO-8 package, suitable for surface-mount technology (SMT) assembly. It is RoHS3 compliant and has an MSL rating of 1.

DMN2009LSS13 Quick Information

Product Type: MOSFET
Canonical Name: DMN2009LSS13 N-channel MOSFET
Subcategory: N-channel

DMN2009LSS13 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

DMN2009LSS13 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

DMN2009LSS13 Features

  • N-channel MOSFET with 20V drain-source voltage.
  • 12A continuous drain current capability.
  • Low on-resistance of 12mΩ at 2.5V.
  • Operates from -55℃ to +150℃.
  • Surface-mount SO-8 package.

DMN2009LSS13 Applications

  • Used in RF switching circuits
  • Suitable for high-frequency applications
  • Ideal for signal filtering modules
  • Designed for space-constrained RF designs

DMN2009LSS13 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage rating for the DMN2009LSS13?

The drain-to-source voltage rating for the DMN2009LSS13 is 20V.

What is the continuous drain current for the DMN2009LSS13?

The continuous drain current for the DMN2009LSS13 is 12A.

What is the on-resistance of the DMN2009LSS13?

The on-resistance (RDS(on)) of the DMN2009LSS13 is 12mΩ at 2.5V.

What is the operating temperature range for the DMN2009LSS13?

The operating temperature range for the DMN2009LSS13 is -55℃ to +150℃.

What package type is the DMN2009LSS13 supplied in?

The DMN2009LSS13 is supplied in an SO-8 package.

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