DMN2009LSS-13 N-Channel enhancement mode MOSFET with 20V drain-source voltage and 12A continuous drain current. Features low on-resistance of 8mΩ at 10V gate drive.
Mfr Part #:

DMN2009LSS-13

Available from 1 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
N-Channel enhancement mode MOSFET with 20V drain-source voltage and 12A continuous drain current. Features low on-resistance of 8mΩ at 10V gate drive.
✓ Total Stock: 41 pcs

DMN2009LSS-13 Available from 1 distributor

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DMN2009LSS-13 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
Weight

DMN2009LSS-13 Description

Short technical summary and product information.

This MOSFET is designed to minimize on-state resistance (RDS(on)) while maintaining superior switching performance, making it ideal for high efficiency power management applications. Key electrical specifications include a drain-source voltage of 20V, continuous drain current of 12A at 25°C ambient, and pulsed drain current up to 42A. The device offers low on-resistance: 8mΩ maximum at Vgs=10V and Id=12A, 9mΩ at Vgs=4.5V and Id=10A, and 12mΩ at Vgs=2.5V and Id=8A. Gate threshold voltage is 1.2V maximum at Id=250µA. Input capacitance is 2555pF maximum and gate charge is 58.3nC maximum at Vgs=10V.

 

The MOSFET is housed in an 8-SOIC surface mount package with molded plastic, green molding compound. It is rated for operation from -55°C to 150°C junction temperature. Maximum power dissipation is 2W at 25°C ambient with a junction-to-ambient thermal resistance of 62.5°C/W. The device is supplied in Tape & Reel packaging with 2500 pieces per reel. It is fully RoHS3 compliant, lead-free, and halogen and antimony free (green device). Moisture sensitivity level is MSL 1 per J-STD-020.

DMN2009LSS-13 Quick Information

Product Type: MOSFET
Series: DMN2009LSS
Canonical Name: N-Channel Enhancement Mode MOSFET, 20V Drain-Source, 12A Continuous Drain, 8-SOIC
Subcategory: N-Channel MOSFET

DMN2009LSS-13 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Lead Free

DMN2009LSS-13 Features

  • Low on-resistance of 8mΩ at 10V gate drive.
  • Low gate threshold voltage of 1.2V maximum.
  • High continuous drain current rating of 12A.
  • Surface mount 8-SOIC package for compact designs.
  • RoHS and halogen-free compliant.

DMN2009LSS-13 Applications

  • Ideal for backlighting applications.
  • Suitable for DC-DC converter circuits.
  • Used in power management functions.
  • High efficiency switching for portable devices.

DMN2009LSS-13 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the DMN2009LSS-13?

The drain-source voltage (Vdss) is 20V.

What is the maximum continuous drain current?

The continuous drain current is 12A at TA=25°C and 9.6A at TA=70°C.

What is the on-resistance at 10V gate drive?

The maximum on-resistance is 8mΩ at Vgs=10V and Id=12A.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

What package is the DMN2009LSS-13 available in?

It is available in an 8-SOIC (0.154", 3.90mm Width) surface mount package.

Is the DMN2009LSS-13 RoHS compliant?

Yes, it is RoHS3 compliant and lead-free, verified by the datasheet.

What is the gate threshold voltage?

The maximum gate threshold voltage is 1.2V at Id=250µA.

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