| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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248,400 pcs
|
248400 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request | |
|
2,530 pcs
|
2530 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
10 pcs
|
10 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
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| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The DMN2008LFU-7 is a dual N-channel enhancement mode MOSFET designed to minimize on-state resistance while maintaining superior switching performance, making it ideal for high-efficiency power management applications. This new generation MOSFET features a 20V drain-source breakdown voltage, a continuous drain current of 14.5A at 25°C, and a low maximum on-resistance of 5.4mOhm at VGS = 4.5V. It also offers low gate threshold voltage, low input capacitance of 1418pF, and fast switching speed.
Key electrical characteristics include a maximum gate charge of 42.3nC at 10V, pulsed drain current capability of 75A, and avalanche energy rating of 20mJ. The device is ESD protected for enhanced reliability. It is suitable for power management functions, battery pack protection, and load switch applications.
The DMN2008LFU-7 is housed in a 6-pin U-DFN2030-6 (Type B) surface-mount package with exposed pad for thermal management. It is totally lead-free and fully RoHS compliant, and also halogen and antimony free (Green device). The package is moisture sensitivity level 1 per J-STD-020.
Yes, the DMN2008LFU-7 is totally lead-free and fully RoHS compliant, and also halogen and antimony free (Green device).
The drain-source breakdown voltage is 20V maximum.
It is available in the U-DFN2030-6 (Type B) surface mount package with exposed pad.
The operating junction temperature range is -55°C to 150°C.
The maximum continuous drain current is 14.5A at VGS = 4.5V and TA = 25°C, and 11.5A at TA = 70°C.
The maximum gate threshold voltage is 1.5V at ID = 250A (note: test condition may be 250µA per datasheet).
The maximum input capacitance (Ciss) is 1418pF at VDS = 10V.