DMN2005UPS-13 The DMN2005UPS-13 is a 20V N-Channel Enhancement Mode MOSFET from Diodes Incorporated. It offers a continuous drain current of 100A at Tc=25°C and low on-resistance of 4.6mOhm at 4.5V gate drive.
Mfr Part #:

DMN2005UPS-13

Available from 1 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
The DMN2005UPS-13 is a 20V N-Channel Enhancement Mode MOSFET from Diodes Incorporated. It offers a continuous drain current of 100A at Tc=25°C and low on-resistance of 4.6mOhm at 4.5V gate drive.
✓ Total Stock: 344 pcs

DMN2005UPS-13 Available from 1 distributor

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DMN2005UPS-13 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
Weight

DMN2005UPS-13 Description

Short technical summary and product information.

The DMN2005UPS-13 is a 20V N-Channel Enhancement Mode MOSFET from Diodes Incorporated, designed for high efficiency in power management applications. It features a low drain-source on-resistance of 4.6 milliohms maximum at Vgs=4.5V, enabling minimal conduction losses. The device supports a continuous drain current of 100A at a case temperature of 25°C, making it suitable for demanding load switching and DC-DC converter designs.

 

The MOSFET offers a gate threshold voltage of 1.2V maximum at 250µA drain current and a maximum gate-source voltage rating of ±12V. Input capacitance is 5337 pF typical at Vds=10V, and total gate charge is 142 nC at Vgs=10V, contributing to fast switching performance. The operating junction temperature range spans -55°C to 150°C.

 

The DMN2005UPS-13 is housed in a PowerDI5060-8 surface mount package (8-PowerTDFN), with a low profile under 1.1mm. The package is molded in UL 94V-0 rated green plastic and weighs approximately 0.097 grams. Terminal finish is matte tin annealed over a copper leadframe, solderable per MIL-STD-202, Method 208. The device is RoHS3 compliant and halogen and antimony free.

DMN2005UPS-13 Quick Information

Product Type: N-Channel MOSFET
Canonical Name: DMN2005UPS-13 N-Channel Enhancement Mode MOSFET, 20V Vdss, 100A Id (Tc), PowerDI5060-8
Subcategory: N-Channel MOSFET

DMN2005UPS-13 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Lead-Free Finish

DMN2005UPS-13 Features

  • High efficiency N-channel power MOSFET.
  • Low on-resistance minimizes conduction losses.
  • Designed for notebook battery management.
  • Surface mount PowerDI5060-8 package.
  • RoHS compliant and halogen free.

DMN2005UPS-13 Applications

  • Ideal for motor control applications.
  • Suitable for DC-DC converters.
  • Used in power management circuits.
  • Great for load switching.
  • Notebook battery power management.

DMN2005UPS-13 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

The maximum drain-source voltage (Vdss) is 20V.

What package is this MOSFET available in?

It is available in the PowerDI5060-8 package (8-PowerTDFN).

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

Is the DMN2005UPS-13 RoHS compliant?

Yes, it is RoHS3 compliant with a lead-free finish per the datasheet.

What is the continuous drain current at 25°C case temperature?

The continuous drain current at Tc=25°C is 100A.

What is the on-resistance at 4.5V gate drive?

The maximum on-resistance is 4.6 milliohms at Vgs=4.5V and Id=13.5A.

What is the gate threshold voltage?

The maximum gate threshold voltage is 1.2V at Id=250µA.

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