| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,183,020 pcs
|
1183020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,657 pcs
|
2657 pcs | On Request | 1 | On Request | On Request | 20+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Termination Finish | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id | |
| Weight |
The DMN2005LP4K-7 is a N-Channel Enhancement Mode MOSFET from Diodes Incorporated. It features a drain-source voltage (Vdss) of 20V and a continuous drain current of 200mA. The maximum drain-source on-resistance is 1.5Ohm at Vgs=4V and Id=10mA. The gate threshold voltage is very low at 0.9V maximum, enabling low-voltage drive.
The device is housed in an ultra-small X2-DFN1006-3 surface mount package with dimensions of just 0.1 x 0.06 inches (approximate weight 0.001g). It operates over a wide temperature range from -65°C to 150°C. The MOSFET also includes ESD protection on the gate.
Compliance-wise, it is fully RoHS3 compliant, halogen and antimony free, and meet MSL Level 1 requirements for moisture sensitivity. The part is qualified to JEDEC standards for high reliability.
20V
X2-DFN1006-3 (3-XFDFN)
-65°C to 150°C (junction)
Yes, RoHS3 compliant.
0.9V at Id=100µA
200mA (at Ta=25°C)
41pF at Vds=3V