DMN2004WKQ-7 N-Channel enhancement mode MOSFET with 20V drain-source voltage and 540mA continuous drain current. Packaged in SOT-323 for surface mount applications.
Mfr Part #:

DMN2004WKQ-7

Available from 1 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
N-Channel enhancement mode MOSFET with 20V drain-source voltage and 540mA continuous drain current. Packaged in SOT-323 for surface mount applications.
✓ Total Stock: 15,000 pcs

DMN2004WKQ-7 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
15,000 pcs
15000 pcs On Request 1 On Request On Request 24+ On Request On Request

DMN2004WKQ-7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
Weight

DMN2004WKQ-7 Description

Short technical summary and product information.

The DMN2004WKQ-7 is an N-Channel enhancement mode MOSFET from Diodes Incorporated, designed for automotive applications. It is qualified to AEC-Q101 standards and supports PPAP requirements.

 

Key electrical specifications include a maximum drain-source voltage of 20V, a maximum gate-source voltage of ±8V, and a continuous drain current of 540mA at 25°C. The drain-source on-resistance is 550mOhm maximum at Vgs=4.5V and Id=540mA. The gate threshold voltage is 1V maximum at Id=250µA. Input capacitance is 150pF at Vds=16V.

 

The device is housed in a SOT-323 surface mount package with molded plastic case material (UL 94V-0). It weighs approximately 0.006 grams and has matte tin annealed terminals over an Alloy 42 leadframe. The operating junction temperature range is -55°C to 150°C, with a maximum power dissipation of 200mW at 25°C.

 

This MOSFET is fully RoHS compliant, lead-free, and halogen and antimony free (green). Moisture sensitivity level is 1 (unlimited). Typical applications include engine management systems, DC-DC converters, and body control electronics.

DMN2004WKQ-7 Quick Information

Product Type: N-Channel MOSFET
Series: DMN2004WKQ
Canonical Name: DMN2004WKQ-7 N-Channel Enhancement Mode MOSFET
Subcategory: N-Channel MOSFET

DMN2004WKQ-7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Lead Free

DMN2004WKQ-7 Features

  • Low on-resistance: 550 mOhm at 4.5V.
  • Qualified to AEC-Q101 automotive standard.
  • Low input capacitance of 150 pF.
  • Surface mount SOT-323 package.
  • RoHS and halogen free compliant.

DMN2004WKQ-7 Applications

  • Used in engine management systems.
  • Ideal for DC-DC converter circuits.
  • Suitable for body control electronics.

DMN2004WKQ-7 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage?

20 V

What is the package type?

SOT-323 (SC-70)

What is the operating temperature range?

-55°C to 150°C (junction)

Is this component RoHS compliant?

Yes, RoHS compliant.

What is the maximum continuous drain current?

540 mA at 25°C ambient.

What is the gate threshold voltage?

1 V maximum at Id=250 µA.

Is the device AEC-Q101 qualified?

Yes, it is AEC-Q101 qualified and PPAP capable.

Home
Account

Categories