| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,000 pcs
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2000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Tape & Reel |
The Diodes Incorporated DMN2004VK-7-G is a compact surface-mount N-Channel MOSFET designed for low-voltage applications. It offers a maximum drain-to-source voltage of 20V and a continuous drain current rating of 540mA at 25°C.
Key electrical characteristics include a maximum on-resistance of 550mOhm at 540mA and 4.5V, a gate threshold voltage of 1V maximum at 250µA, and a maximum gate-to-source voltage of ±8V. The input capacitance is rated at 150pF at 16V. The device operates efficiently with gate voltages as low as 1.8V.
Packaged in a SOT-523 surface-mount package, this MOSFET is suitable for space-constrained designs. It has a power dissipation of 150mW and operates across a wide temperature range of -55°C to 150°C. Its low on-resistance contributes to improved efficiency in power management.
Applications include portable electronics, power switching circuits, voltage translation, load switches, and logic level translation. It is ideal for DC-DC converters, signal gating, and static switching in consumer electronics and wearable devices.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 20V.
The continuous drain current is 540mA at 25°C.
The maximum on-resistance is 550mOhm at 540mA, 4.5V.
The gate threshold voltage is a maximum of 1V at 250µA.
The operating temperature range is -55°C to 150°C.
It is supplied in a SOT-523 package for surface mounting.