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DMN2004VK-7 Dual N-Channel Enhancement Mode MOSFET, 20V drain-source voltage, 540mA drain current, 550mOhm on-resistance, in a SOT-563 surface mount package.
Mfr Part #:

DMN2004VK-7

Available from 2 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
Dual N-Channel Enhancement Mode MOSFET, 20V drain-source voltage, 540mA drain current, 550mOhm on-resistance, in a SOT-563 surface mount package.
✓ Total Stock: 2,633,520 pcs

DMN2004VK-7 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
2,632,020 pcs
On Request
2632020 pcs On Request 1 On Request On Request On Request On Request On Request
Smaxon Electronics ✓
Non-Authorised Inventory information
1,500 pcs
On Request
1500 pcs On Request 1 On Request On Request 1104+ On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

DMN2004VK-7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs(th) (Max) @ Id
Weight
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DMN2004VK-7 Description

Short technical summary and product information.

The DMN2004VK-7 is a dual N-channel enhancement mode MOSFET from Diodes Incorporated. It features low on-resistance (550mOhm max at 4.5V Vgs), low gate threshold voltage (1V max), and low input capacitance (150pF). The device is designed for efficient switching and logic-level gate drive.

 

It is housed in an ultra-small SOT-563 surface-mount package, making it suitable for space-constrained applications. The MOSFET is fully RoHS compliant, lead-free, and halogen-free. It also features an ESD protected gate.

 

Typical applications include load switching, power management, and DC-DC converters where dual MOSFETs are required.

DMN2004VK-7 Quick Information

Product Type: MOSFET Array
Canonical Name: DMN2004VK-7 Dual N-Channel Enhancement Mode MOSFET
Subcategory: Dual N-Channel MOSFET Array

DMN2004VK-7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Lead Free

DMN2004VK-7 Features

  • Dual N-channel MOSFET in one package.
  • Low on-resistance of 550mOhm max.
  • Logic level gate threshold voltage.
  • Ultra-small SOT-563 surface mount package.
  • RoHS compliant and lead-free.

DMN2004VK-7 Applications

  • Suitable for load switching applications.
  • Used in power management circuits.
  • Ideal for DC-DC converters requiring dual MOSFETs.
  • Can be used in battery protection circuits.

DMN2004VK-7 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage?

20 V.

What is the continuous drain current?

540 mA at 25°C ambient temperature.

What is the on-resistance?

550 mOhm maximum at 540 mA drain current and 4.5 V gate-source voltage.

What is the operating temperature range?

-55°C to 150°C junction temperature.

What package is this MOSFET in?

SOT-563 surface mount package.

Is the device RoHS compliant?

Yes, it is fully RoHS3 compliant and lead-free.

What is the gate threshold voltage?

1 V maximum at 250 µA drain current.

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