DMN2004TK-7 N-Channel enhancement mode MOSFET with 20V drain-source voltage and 540mA continuous drain current. Housed in a surface-mount SOT-523 package.
Mfr Part #:

DMN2004TK-7

Available from 2 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
N-Channel enhancement mode MOSFET with 20V drain-source voltage and 540mA continuous drain current. Housed in a surface-mount SOT-523 package.
✓ Total Stock: 19,020 pcs
$ Price Range: $0.06

DMN2004TK-7 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
16,020 pcs
16020 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
3,000 pcs
3000 pcs On Request 1 On Request On Request 1217+ On Request On Request

DMN2004TK-7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Termination Finish
Vgs (Max)
Vgs(th) (Max) @ Id
Weight

DMN2004TK-7 Description

Short technical summary and product information.

The DMN2004TK-7 is an N-channel enhancement mode MOSFET from Diodes Incorporated designed for low voltage switching applications. It features a drain-source voltage of 20V and a continuous drain current of 540mA at 25°C, with a pulsed current capability of 1.5A.

 

This MOSFET offers low on-resistance of 0.4Ω typical at VGS=4.5V and 540mA, and a low gate threshold voltage from 0.5V to 1.0V, enabling efficient operation at low gate drive voltages. It also includes ESD protection up to 2kV and has low input capacitance of 150pF, contributing to fast switching performance.

 

The device is packaged in a compact SOT-523 surface mount package with a weight of only 0.002g, making it suitable for space-constrained designs. It is RoHS compliant and lead-free by design, with a moisture sensitivity level of 1 (unlimited). The operating temperature range is -55°C to 150°C, allowing use in harsh environments.

DMN2004TK-7 Quick Information

Product Type: Single N-Channel MOSFET
Canonical Name: DMN2004TK-7 N-Channel Enhancement Mode MOSFET
Subcategory: Transistors - FETs, MOSFETs - Single

DMN2004TK-7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Lead Free by Design

DMN2004TK-7 Estimated Pricing

Qty Low High
3,000+ $0.06 $0.06

Estimated market price range - modelled values for guidance only, not live distributor offers.

DMN2004TK-7 Features

  • Low on-resistance 0.4Ω typical at 4.5V.
  • ESD protected up to 2kV.
  • Low gate threshold voltage 0.5V to 1.0V.
  • Fast switching speed with low capacitance.
  • Surface mount SOT-523 package.

DMN2004TK-7 Applications

  • Suitable for portable battery-powered devices.
  • Used in load switching and power management.
  • Ideal for DC-DC converter circuits.
  • Can be used in automotive electronics.

DMN2004TK-7 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the DMN2004TK-7?

The drain-source voltage (VDSS) is 20V.

What is the continuous drain current rating?

The continuous drain current is 540mA at 25°C ambient temperature.

What is the package type of the DMN2004TK-7?

It is available in a surface-mount SOT-523 package.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

Is the DMN2004TK-7 RoHS compliant?

Yes, it is RoHS compliant and lead-free by design.

What is the typical on-resistance at 4.5V gate drive?

The typical on-resistance is 0.4Ω at VGS=4.5V and ID=540mA.

Does this MOSFET have ESD protection?

Yes, it is ESD protected up to 2kV (HBM).

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