DMN2004K-7 The DMN2004K-7 is an N-Channel enhancement mode MOSFET from Diodes Incorporated, featuring a drain-source voltage of 20V and continuous drain current of 630mA. It offers low on-resistance of 550mΩ at 4.5V and is housed in a surface-mount SOT-23-3 package.
Mfr Part #:

DMN2004K-7

Available from 4 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
The DMN2004K-7 is an N-Channel enhancement mode MOSFET from Diodes Incorporated, featuring a drain-source voltage of 20V and continuous drain current of 630mA. It offers low on-resistance of 550mΩ at 4.5V and is housed in a surface-mount SOT-23-3 package.
✓ Total Stock: 492,812 pcs

DMN2004K-7 Available from 4 distributors

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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406,020 pcs
406020 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
69,000 pcs
69000 pcs On Request 1 On Request On Request On Request On Request On Request
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15,000 pcs
15000 pcs On Request 1 On Request On Request 24+ On Request On Request
Non-Authorised Inventory information
2,792 pcs
2792 pcs On Request 1 On Request On Request 14+ On Request On Request

DMN2004K-7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
ESD Protection
FET Type
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Technology
Termination Finish
Vgs (Max)
Vgs(th) (Max) @ Id
Weight

DMN2004K-7 Description

Short technical summary and product information.

The DMN2004K-7 is a new generation N-Channel enhancement mode MOSFET from Diodes Incorporated designed to minimize on-state resistance while maintaining superior switching performance. Key specifications include a drain-source voltage (Vdss) of 20V, maximum drain current of 630mA at 25°C, and maximum on-resistance of 550mΩ at VGS=4.5V (900mΩ at VGS=1.8V). The device features a low gate threshold voltage of 1V at 250µA, low input capacitance of 150pF at VDS=16V, and ESD protection up to 2kV.

 

The MOSFET is suitable for a wide range of applications including DC-DC converters and power-management functions, particularly in low-voltage portable devices. It is packaged in a surface-mount SOT-23-3 (also TO-236-3, SC-59) package, with tape and reel packaging of 3000 units per reel. The device is fully RoHS3 compliant, totally lead-free, halogen and antimony free, and has moisture sensitivity level MSL 1 per J-STD-020. Operating temperature range is -65°C to 150°C (junction), with maximum power dissipation of 350mW at 25°C ambient.

DMN2004K-7 Quick Information

Product Type: N-Channel MOSFET
Canonical Name: N-Channel Enhancement Mode MOSFET, 20V, 630mA, SOT-23-3
Subcategory: Single MOSFET

DMN2004K-7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 1 per J-STD-020
REACH Status: REACH Unaffected
Lead Free: Totally Lead-Free & Fully RoHS Compliant

DMN2004K-7 Features

  • Low on-resistance of 550mΩ at 4.5V.
  • ESD protected up to 2kV.
  • Surface mount SOT-23-3 package.
  • Low input capacitance of 150pF.
  • Low gate threshold voltage for 1.8V drive.

DMN2004K-7 Applications

  • Used in DC-DC converter circuits.
  • Ideal for power management functions.
  • Suitable for low-voltage portable devices.
  • High-efficiency switching applications.

DMN2004K-7 FAQs

7 frequently asked questions generated from this part’s specifications.
What package is the DMN2004K-7 available in?

Surface-mount SOT-23-3 (also TO-236-3, SC-59).

What is the operating temperature range?

-65°C to 150°C (junction temperature).

Is the DMN2004K-7 RoHS compliant?

Yes, it is RoHS3 compliant, totally lead-free and halogen-free.

What is the maximum drain current?

630mA at 25°C ambient temperature.

What is the on-resistance at 4.5V gate drive?

Maximum 550mΩ at ID=540mA and VGS=4.5V.

What is the gate threshold voltage?

Maximum 1V at ID=250µA.

Does the MOSFET include ESD protection?

Yes, ESD protected up to 2kV.

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