DMN2004DMK-7

The DMN2004DMK-7 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It is designed for general-purpose switching applications requiring two independent MOSFETs in a compact package. The device features a maximum drain-source voltage of 20V and a continuous drain current of 540mA at 25°C ambient temperature, with a pulsed drain current capability of up to 1.5A. The on-resistance is typically 550mOhm maximum at 4.5V gate drive and 540mA drain current, ensuring low conduction losses. The gate threshold voltage is 1V maximum at 250µA drain current, making it suitable for logic-level gate drive signals.

The MOSFETs are fabricated using a logic-level gate technology, allowing direct interfacing with low-voltage microcontrollers. The input capacitance is 150pF typical at 16V drain-source voltage, contributing to fast switching speeds. The device is qualified to AEC-Q101 standards for high reliability, making it suitable for automotive applications. It is also RoHS3 compliant, lead-free, and halogen-free, meeting environmental regulations.

The DMN2004DMK-7 is packaged in a SOT-26 surface-mount package, which is ultra-small and suitable for space-constrained designs. The package is rated for moisture sensitivity level 1 (unlimited) per J-STD-020, and the operating junction temperature range is -65°C to +150°C. The maximum power dissipation is 225mW at 25°C ambient. The thermal resistance from junction to ambient is 556°C/W. The part is supplied in tape and reel packaging with 3,000 units per reel.