DMN15H310SE-13 N-Channel MOSFET with 150V drain-source voltage and 2A continuous drain current. Surface mount package SOT223.
Mfr Part #:

DMN15H310SE-13

Available from 2 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
N-Channel MOSFET with 150V drain-source voltage and 2A continuous drain current. Surface mount package SOT223.
✓ Total Stock: 17,000 pcs

DMN15H310SE-13 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
14,500 pcs
14500 pcs On Request 1 On Request On Request 20+ On Request On Request
Non-Authorised Inventory information
2,500 pcs
2500 pcs On Request 1 On Request On Request On Request On Request On Request

DMN15H310SE-13 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

DMN15H310SE-13 Description

Short technical summary and product information.

The DMN15H310SE-13 is an N-Channel enhancement mode MOSFET from Diodes Incorporated. It is designed to minimize on-state resistance while maintaining superior switching performance, making it ideal for high efficiency power management applications.

 

Key electrical specifications include a drain-source voltage (Vdss) of 150V, continuous drain current of 2A at ambient temperature (Ta=25°C) and 7.1A at case temperature (Tc=25°C). The on-resistance is 310mΩ at Vgs=10V and 330mΩ at Vgs=5V. Gate charge is 8.7nC at Vgs=10V, and input capacitance is 405pF at Vds=25V. The device is rated for avalanche energy of 1.45mJ and has a peak diode recovery dv/dt of 5V/ns.

 

The MOSFET is housed in a surface mount SOT223 package (TO-261-4, TO-261AA) with a supplier device package of SOT-223-3. It operates over a junction temperature range of -55°C to 150°C and has a maximum power dissipation of 1.9W at Ta=25°C. Thermal resistance from junction to ambient is 64°C/W.

 

Applications include motor control, transformer driving switches, DC-DC converters, power management functions, and uninterruptible power supplies. The device is RoHS compliant, halogen and antimony free, and features a lead-free finish.

DMN15H310SE-13 Quick Information

Product Type: MOSFET
Canonical Name: DMN15H310SE-13 N-Channel MOSFET
Subcategory: Single MOSFET

DMN15H310SE-13 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

DMN15H310SE-13 Features

  • 150V drain-source voltage rating.
  • Low on-resistance of 310mΩ at 10V.
  • Fast switching with 8.7nC gate charge.
  • Surface mount SOT223 package.
  • RoHS compliant and halogen-free.

DMN15H310SE-13 Applications

  • Used in motor control circuits.
  • Ideal for DC-DC converter designs.
  • Suitable for power management functions.
  • Applied in transformer driving switches.
  • Used in uninterruptible power supplies.

DMN15H310SE-13 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage (Vds) for the IRLZ44NPBF?

55V

What is the continuous drain current rating at Ta=25°C?

47A

What is the maximum Rds(on) at Vgs=10V?

22 mΩ

What is the gate threshold voltage (Vgs(th)) range?

1V to 2V

What is the maximum power dissipation at Ta=25°C?

110W

What package type is the IRLZ44NPBF?

TO-220AB

Is the IRLZ44NPBF a logic level MOSFET?

Yes, it is a logic level MOSFET with Vgs(th) as low as 1V.

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