| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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14,500 pcs
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14500 pcs | On Request | 1 | On Request | On Request | 20+ | On Request | On Request | |
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The DMN15H310SE-13 is an N-Channel enhancement mode MOSFET from Diodes Incorporated. It is designed to minimize on-state resistance while maintaining superior switching performance, making it ideal for high efficiency power management applications.
Key electrical specifications include a drain-source voltage (Vdss) of 150V, continuous drain current of 2A at ambient temperature (Ta=25°C) and 7.1A at case temperature (Tc=25°C). The on-resistance is 310mΩ at Vgs=10V and 330mΩ at Vgs=5V. Gate charge is 8.7nC at Vgs=10V, and input capacitance is 405pF at Vds=25V. The device is rated for avalanche energy of 1.45mJ and has a peak diode recovery dv/dt of 5V/ns.
The MOSFET is housed in a surface mount SOT223 package (TO-261-4, TO-261AA) with a supplier device package of SOT-223-3. It operates over a junction temperature range of -55°C to 150°C and has a maximum power dissipation of 1.9W at Ta=25°C. Thermal resistance from junction to ambient is 64°C/W.
Applications include motor control, transformer driving switches, DC-DC converters, power management functions, and uninterruptible power supplies. The device is RoHS compliant, halogen and antimony free, and features a lead-free finish.
55V
47A
22 mΩ
1V to 2V
110W
TO-220AB
Yes, it is a logic level MOSFET with Vgs(th) as low as 1V.