DMN13H750S-7 130V N-channel enhancement mode MOSFET in SOT23 package. Continuous drain current 1A, on-resistance 0.75Ω at 10V gate drive.
Mfr Part #:

DMN13H750S-7

Available from 3 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
130V N-channel enhancement mode MOSFET in SOT23 package. Continuous drain current 1A, on-resistance 0.75Ω at 10V gate drive.
✓ Total Stock: 97,613 pcs

DMN13H750S-7 Available from 3 distributors

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✓ Non-Authorised
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55,020 pcs
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39,000 pcs
39000 pcs On Request 1 On Request On Request 21+ On Request On Request
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3,593 pcs
3593 pcs On Request 1 On Request On Request On Request On Request On Request

DMN13H750S-7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
Weight

DMN13H750S-7 Description

Short technical summary and product information.

The DMN13H750S-7 is a 130V N-channel enhancement mode MOSFET from Diodes Incorporated, designed for low on-state resistance and high switching speed in space-constrained applications. It is housed in a small SOT23 surface mount package.

 

Key electrical characteristics include a maximum drain-source voltage of 130V, continuous drain current of 1.0 A at 25°C ambient, and a low on-resistance of 0.75 Ω maximum at Vgs = 10V. The device supports gate drive voltages from 6V to 10V and features a maximum gate threshold voltage of 4V. Input capacitance is 231 pF and total gate charge is 5.6 nC, enabling fast switching.

 

The part is suitable for DC-DC converters, power management functions, battery operated systems, and solid-state relays. It is fully RoHS compliant, halogen- and antimony-free, and qualified to AEC-Q101 standards. Packaging is Tape & Reel with 3000 units per reel.

DMN13H750S-7 Quick Information

Product Type: MOSFET
Canonical Name: DMN13H750S-7 130V N-Channel Enhancement Mode MOSFET
Subcategory: Single MOSFETs

DMN13H750S-7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Lead Free

DMN13H750S-7 Features

  • 130V drain-source voltage rating.
  • 1A continuous drain current at 25°C.
  • Low 0.75Ω on-resistance at 10V gate drive.
  • SOT23 surface mount package.
  • RoHS and halogen-free compliant green device.

DMN13H750S-7 Applications

  • DC-DC converter circuits.
  • Power management functions.
  • Battery operated systems.
  • Relay and solenoid drivers.
  • Solid-state relay applications.

DMN13H750S-7 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the DMN13H750S-7?

The maximum drain-source voltage is 130V.

What is the continuous drain current rating?

The continuous drain current is 1.0A at TA=+25°C with VGS=10V.

What is the maximum on-resistance (Rds on) of the DMN13H750S-7?

The maximum Rds(on) is 0.75Ω at VGS=10V and ID=1.0A.

What package does the DMN13H750S-7 come in?

The DMN13H750S-7 is supplied in a SOT23 surface mount package.

What is the operating temperature range?

The operating junction temperature range is -55°C to +150°C.

Is the DMN13H750S-7 RoHS compliant?

Yes, the DMN13H750S-7 is fully RoHS3 compliant (no purposely added lead).

What is the gate threshold voltage (Vgs(th))?

The maximum gate threshold voltage is 4V at ID=250µA.

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