DMN1260UFA-7B N-Channel enhancement mode MOSFET from Diodes Incorporated. Rated for 12V drain-source voltage and 500mA continuous drain current with a maximum on-resistance of 366mOhm at 4.5V gate drive.
Mfr Part #:

DMN1260UFA-7B

Available from 1 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
N-Channel enhancement mode MOSFET from Diodes Incorporated. Rated for 12V drain-source voltage and 500mA continuous drain current with a maximum on-resistance of 366mOhm at 4.5V gate drive.
✓ Total Stock: 11,020 pcs
$ Price Range: $0.37 - $0.47

DMN1260UFA-7B Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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11,020 pcs
11020 pcs On Request 1 On Request On Request On Request On Request On Request

DMN1260UFA-7B Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
Weight

DMN1260UFA-7B Description

Short technical summary and product information.

The DMN1260UFA-7B is a 12V N-Channel enhancement mode MOSFET from Diodes Incorporated, designed for low on-state resistance and efficient switching performance. It features a maximum continuous drain current of 500mA and a pulsed drain current rating of 1.5A. The device offers a low on-resistance of 366mOhm at Vgs=4.5V and 200mA, with higher resistance values at lower gate drive voltages down to 1.5V.

 

This MOSFET is housed in an ultra-low profile X2-DFN0806-3 surface mount package with a 0.4mm profile and a footprint of 0.48mm², making it suitable for space-constrained applications. It includes an ESD protected gate and has a maximum power dissipation of 360mW. The device operates over a junction temperature range of -55°C to 150°C.

 

Typical applications include load switching, power management functions, and portable power adaptors. The part is fully RoHS compliant, lead-free, and halogen- and antimony-free.

DMN1260UFA-7B Quick Information

Product Type: MOSFET
Canonical Name: DMN1260UFA-7B N-Channel Enhancement Mode MOSFET
Subcategory: Single N-Channel

DMN1260UFA-7B Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 - Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead Free

DMN1260UFA-7B Estimated Pricing

Qty Low High
1+ $0.47 $0.47
10+ $0.44 $0.44
100+ $0.42 $0.42
1,000+ $0.39 $0.39
10,000+ $0.37 $0.37

Estimated market price range - modelled values for guidance only, not live distributor offers.

DMN1260UFA-7B Features

  • 12V drain-source breakdown voltage rating.
  • 500mA continuous drain current capability.
  • Low on-resistance of 366mOhm at 4.5V.
  • Ultra-low profile 0.4mm X2-DFN0806-3 package.
  • ESD protected gate for enhanced reliability.

DMN1260UFA-7B Applications

  • Ideal for load switch applications.
  • Suitable for power management functions.
  • Used in portable power adaptors.

DMN1260UFA-7B FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the DMN1260UFA-7B?

The maximum drain-source voltage (Vdss) is 12V.

What is the continuous drain current rating?

The continuous drain current (Id) is 500mA at Ta=25°C.

What is the on-resistance of this MOSFET?

The maximum on-resistance is 366mOhm at Vgs=4.5V and Id=200mA.

What package does the DMN1260UFA-7B come in?

It comes in a surface mount X2-DFN0806-3 package.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

Is the DMN1260UFA-7B RoHS compliant?

Yes, it is fully RoHS compliant and lead-free.

What is the gate threshold voltage?

The maximum gate threshold voltage is 1V at Id=250µA.

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