| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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102,465 pcs
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102465 pcs | On Request | 1 | On Request | On Request | 20+ | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| ESD Protection | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id | |
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The DMN1150UFB-7B is an N-Channel enhancement mode MOSFET from Diodes Incorporated, designed for high efficiency power management applications.
Key specifications include a drain-source breakdown voltage of 12V, continuous drain current of 1.41A at 25°C, and maximum on-resistance of 150mOhm at 4.5V gate drive. The device features very low gate threshold voltage (1V max at 250µA) and low input capacitance (106pF), enabling fast switching.
This MOSFET is housed in a ultra-compact X1-DFN1006-3 surface mount package, measuring only 1.0mm x 0.6mm, ideal for space-constrained designs. It is ESD protected and qualified to AEC-Q101 standards for automotive reliability.
The device is RoHS compliant, lead-free, and halogen-free, making it suitable for environmentally conscious applications. Typical applications include DC-DC converters and power management functions.
The drain-source breakdown voltage (Vdss) is 12V.
The continuous drain current is 1.41A at TA = 25°C with VGS = 4.5V.
The device is housed in a X1-DFN1006-3 surface mount package.
The operating junction temperature range is -55°C to 150°C.
Yes, the device is fully RoHS compliant and lead-free.
The maximum on-resistance is 150mOhm at VGS = 4.5V with ID = 1A.
Yes, the gate is ESD protected as stated in the datasheet features.