| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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19,020 pcs
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19020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
4,607 pcs
|
4607 pcs | On Request | 1 | On Request | On Request | 1841+ | On Request | On Request | |
|
418 pcs
|
418 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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84 pcs
|
84 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1 pcs
|
1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1 pcs
|
1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The DMN10H700S-7 is a 100V N-Channel Enhancement Mode MOSFET from Diodes Incorporated, designed for high-efficiency power management applications. This new generation MOSFET minimizes on-state resistance while maintaining superior switching performance, making it ideal for DC-DC converters, power management functions, battery operated systems, solid-state relays, and various drivers (relays, solenoids, lamps, displays).
Key electrical specifications include a drain-source voltage rating of 100V, continuous drain current of 700mA, and a maximum on-resistance of 700 mOhm at Vgs=10V (900 mOhm at Vgs=6V). The device features a low gate threshold voltage (max 4V at 250µA), low input capacitance of 235 pF at Vds=50V, and a gate charge of 4.6 nC at Vgs=10V, enabling fast switching. Power dissipation is rated at 400mW, and the operating junction temperature range is -55°C to 150°C.
The MOSFET is housed in a surface-mount SOT-23-3 package (also known as TO-236-3, SC-59, SOT-23-3), with a compact footprint suitable for space-constrained designs. It is totally lead-free, RoHS3 compliant, and halogen- and antimony-free (green device). Additionally, it is qualified to AEC-Q101 standards for high reliability, making it suitable for automotive applications. The device is supplied in tape and reel packaging with 3000 units per reel.
100V.
SOT-23-3 (TO-236-3, SC-59, SOT-23-3).
-55°C to 150°C (junction temperature).
Yes, it is RoHS3 compliant and lead-free, verified by datasheet.
4V at 250µA drain current.
700 mOhm max at Vgs=10V, Id=1.5A; 900 mOhm max at Vgs=6V.
4.6 nC at Vgs=10V.