DMN10H220LK3-13 N-Channel enhancement mode MOSFET with 100V breakdown voltage and 7.5A continuous drain current. Features low on-resistance of 220mOhm at 10V gate drive.
Mfr Part #:

DMN10H220LK3-13

Available from 2 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
N-Channel enhancement mode MOSFET with 100V breakdown voltage and 7.5A continuous drain current. Features low on-resistance of 220mOhm at 10V gate drive.
✓ Total Stock: 48,500 pcs

DMN10H220LK3-13 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
42,500 pcs
42500 pcs On Request 1 On Request On Request 17+ On Request On Request
Non-Authorised Inventory information
6,000 pcs
6000 pcs On Request 1 On Request On Request 1928+ On Request On Request

DMN10H220LK3-13 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Technology
UL Flammability Rating
Vgs (Max)
Vgs(th) (Max) @ Id
Weight

DMN10H220LK3-13 Description

Short technical summary and product information.

The DMN10H220LK3-13 is an N-Channel enhancement mode MOSFET from Diodes Incorporated, designed for high-efficiency power management applications. It features a drain-source breakdown voltage of 100V and a continuous drain current of 7.5A at 25°C case temperature. The device offers a low on-resistance of 220mOhm maximum at Vgs=10V and Id=2A, ensuring minimal conduction losses.

 

With a low input capacitance of 384pF and a gate charge of 6.7nC, this MOSFET enables fast switching speeds, making it suitable for load switch and DC-DC converter circuits. The device is fully RoHS3 compliant, lead-free, and halogen-free, meeting environmental standards. It is housed in a surface-mount TO-252 (DPak) package with a matte tin finish over a copper leadframe.

 

The operating junction temperature range is -55°C to 150°C, and the device has a thermal resistance of 6.7°C/W from junction to case. It also features an avalanche energy rating of 1.1mJ, providing ruggedness in inductive switching applications.

DMN10H220LK3-13 Quick Information

Product Type: MOSFET
Series: N-Channel
Canonical Name: DMN10H220LK3-13 N-Channel Enhancement Mode MOSFET, 100V, 7.5A, TO-252
Subcategory: Single MOSFET

DMN10H220LK3-13 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Moisture Sensitivity Level 1
REACH Status: REACH Unaffected
Lead Free: Lead-Free

DMN10H220LK3-13 Features

  • Low on-resistance of 220mOhm typical.
  • Fast switching speed with low gate charge.
  • RoHS3 compliant and halogen-free.
  • Surface mount TO-252 package.
  • Operating temperature range -55°C to 150°C.

DMN10H220LK3-13 Applications

  • Ideal for load switch applications.
  • Used in high-efficiency power management.
  • Suitable for DC-DC converter designs.
  • Applicable in battery protection circuits.

DMN10H220LK3-13 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage?

The minimum drain-source breakdown voltage is 100V.

What is the package type?

The device is available in a TO-252-3 (DPak) surface mount package.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

Is this device RoHS compliant?

Yes, the DMN10H220LK3-13 is RoHS3 compliant and lead-free.

What is the typical on-resistance?

The maximum on-resistance is 220mOhm at Vgs=10V and Id=2A.

What is the gate threshold voltage?

The maximum gate threshold voltage is 2.5V at Id=250µA.

What is the maximum drain current?

The maximum continuous drain current is 7.5A at Tc=25°C.

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