| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7,020 pcs
|
7020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Termination Style | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id | |
| Weight |
The DMN10H170SVT-7 is a N-channel enhancement mode MOSFET from Diodes Incorporated, designed for high-efficiency power management applications. It offers a drain-source voltage of 100V and a maximum continuous drain current of 2.6A at 25°C. The device features a low on-resistance of 160mOhm max at VGS=10V and 200mOhm max at VGS=4.5V, enabling efficient power handling.
The MOSFET is housed in a TSOT26 package (SOT-23-6 Thin variant) and is surface mountable. It operates over a junction temperature range of -55°C to +150°C. Key electrical characteristics include a low input capacitance of 1167pF and a gate charge of 9.7nC, supporting fast switching speeds.
The device is fully RoHS3 compliant and lead-free, with halogen and antimony free construction. It is rated MSL Level 1 per J-STD-020 and has a UL flammability classification of 94V-0, making it suitable for a wide range of applications including power management, battery operated systems, and relay/solenoid drivers.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.23 | $0.23 |
| 10+ | $0.19 | $0.19 |
| 100+ | $0.14 | $0.14 |
| 500+ | $0.10 | $0.10 |
| 1,000+ | $0.08 | $0.08 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vdss) is 100V.
The maximum continuous drain current (ID) is 2.6A at TA=+25°C with VGS=10V.
Maximum Rds(on) is 160mΩ at VGS=10V, ID=5A, and 200mΩ at VGS=4.5V.
It is housed in a TSOT26 package (SOT-23-6 Thin, TSOT-23-6).
Yes, it is fully RoHS3 compliant and totally lead-free.
The junction operating temperature range is -55°C to 150°C.
Maximum gate threshold voltage is 3V at ID=250µA.