DMN10H170SK3-13 DMN10H170SK3-13 is a 100V N-Channel Enhancement Mode MOSFET from Diodes Incorporated. It features low on-resistance of 140mΩ at 10V gate drive, 12A continuous drain current, and is housed in a surface-mount TO-252-3 (DPAK) package.
Mfr Part #:

DMN10H170SK3-13

Available from 2 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
DMN10H170SK3-13 is a 100V N-Channel Enhancement Mode MOSFET from Diodes Incorporated. It features low on-resistance of 140mΩ at 10V gate drive, 12A continuous drain current, and is housed in a surface-mount TO-252-3 (DPAK) package.
✓ Total Stock: 27,279 pcs
$ Price Range: $0.19 - $0.46

DMN10H170SK3-13 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
26,020 pcs
26020 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1,259 pcs
1259 pcs On Request 1 On Request On Request On Request On Request On Request

DMN10H170SK3-13 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Termination Style
Vgs (Max)
Vgs(th) (Max) @ Id
Weight

DMN10H170SK3-13 Description

Short technical summary and product information.

The DMN10H170SK3-13 is a 100V N-Channel Enhancement Mode MOSFET designed for high-efficiency power management applications. It offers a low on-state resistance of 140mΩ (max) at Vgs=10V and 160mΩ at Vgs=4.5V, with a continuous drain current rating of 12A at Tc=25°C (7.5A at 100°C). The device features low input capacitance (1167pF max) and a gate charge of 9.7nC, enabling efficient switching performance.

 

This MOSFET is suitable for DC-DC converters, power management functions, and analog switch circuits. It is housed in a surface-mount TO-252-3 (DPAK) package with matte tin annealed terminals and a molded plastic case meeting UL 94V-0 flammability rating. The device is totally lead-free, RoHS3 compliant, halogen and antimony free, and qualified to AEC-Q101 standards for automotive reliability.

 

Thermal characteristics include a maximum power dissipation of 42W at Tc=25°C, with a junction-to-case thermal resistance of 3°C/W and junction-to-ambient of 44°C/W. The operating junction temperature range is -55°C to 150°C. The device is supplied in tape and reel packaging with 2,500 pieces per reel and has a moisture sensitivity level of 1 (unlimited).

DMN10H170SK3-13 Quick Information

Product Type: MOSFET
Canonical Name: DMN10H170SK3-13 N-Channel 100V 12A MOSFET
Subcategory: N-Channel MOSFET

DMN10H170SK3-13 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Lead-Free

DMN10H170SK3-13 Estimated Pricing

Qty Low High
1+ $0.46 $0.46
10+ $0.40 $0.40
100+ $0.31 $0.31
500+ $0.25 $0.25
1,000+ $0.19 $0.19

Estimated market price range - modelled values for guidance only, not live distributor offers.

DMN10H170SK3-13 Features

  • 100V drain-source voltage rating.
  • 12A continuous drain current at 25°C.
  • Low on-resistance of 140mΩ at 10V.
  • Surface mount TO-252-3 (DPAK) package.
  • AEC-Q101 qualified for automotive applications.

DMN10H170SK3-13 Applications

  • DC-DC converters.
  • Power management functions.
  • Analog switch circuits.
  • Automotive electronic systems.

DMN10H170SK3-13 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

100V.

What is the package type?

TO-252-3 (DPAK).

What is the operating temperature range?

-55°C to 150°C.

Is the DMN10H170SK3-13 RoHS compliant?

Yes, it is RoHS3 compliant.

What is the maximum gate threshold voltage?

3V at Id=250µA.

What is the gate charge?

9.7 nC at Vgs=10V.

Is the device AEC-Q101 qualified?

Yes, it is qualified to AEC-Q101 standards for high reliability.

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