DMN10H120SFG-13 N-Channel enhancement mode MOSFET rated for 100V drain-source voltage and 3.8A continuous drain current. Features low on-resistance of 110mOhm at 10V gate drive.
Mfr Part #:

DMN10H120SFG-13

Available from 1 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
N-Channel enhancement mode MOSFET rated for 100V drain-source voltage and 3.8A continuous drain current. Features low on-resistance of 110mOhm at 10V gate drive.
✓ Total Stock: 478,020 pcs
$ Price Range: $0.26 - $1.20

DMN10H120SFG-13 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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478,020 pcs
478020 pcs On Request 1 On Request On Request On Request On Request On Request

DMN10H120SFG-13 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
Weight

DMN10H120SFG-13 Description

Short technical summary and product information.

The DMN10H120SFG-13 is an N-channel enhancement mode MOSFET from Diodes Incorporated, designed for high-efficiency power management applications. It features a maximum drain-source voltage of 100V and a continuous drain current of 3.8A at 25°C ambient with 10V gate drive.

 

The device offers low on-resistance: 110mOhm maximum at Vgs=10V and 122mOhm maximum at Vgs=6V, minimizing conduction losses. Gate charge is 10.6nC maximum at 10V, and input capacitance is 549pF at 50V drain-source. The MOSFET is housed in a compact POWERDI3333-8 surface-mount package, which occupies only 33% of the board area of a standard SO-8 package.

 

This part is suitable for DC-DC converters, power management functions, and other applications requiring efficient switching and low on-state resistance. It is qualified to AEC-Q101 standards for high reliability and is fully RoHS compliant, lead-free, and halogen-free.

DMN10H120SFG-13 Quick Information

Product Type: MOSFET
Series: POWERDI
Canonical Name: DMN10H120SFG-13 N-Channel Enhancement Mode MOSFET
Subcategory: Single MOSFET

DMN10H120SFG-13 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Lead-Free

DMN10H120SFG-13 Estimated Pricing

Qty Low High
1+ $1.20 $1.20
10+ $0.75 $0.75
25+ $0.63 $0.63
50+ $0.55 $0.55
100+ $0.49 $0.49
3,000+ $0.30 $0.30
9,000+ $0.26 $0.26

Estimated market price range - modelled values for guidance only, not live distributor offers.

DMN10H120SFG-13 Features

  • N-channel enhancement mode MOSFET.
  • 100V drain-source voltage rating.
  • 3.8A continuous drain current.
  • Low on-resistance 110mOhm at 10V.
  • Compact POWERDI3333-8 surface mount package.

DMN10H120SFG-13 Applications

  • Power management in portable devices.
  • DC-DC converter circuits.
  • Load switching applications.
  • Battery protection circuits.

DMN10H120SFG-13 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the DMN10H120SFG-13?

The maximum drain-source voltage (Vdss) is 100V.

What is the continuous drain current rating?

The continuous drain current is 3.8A at Vgs=10V and Ta=25°C, and 3.6A at Vgs=6V and Ta=25°C.

What is the on-resistance of this MOSFET?

The maximum on-resistance is 110mOhm at Vgs=10V (Id=3.3A) and 122mOhm at Vgs=6V (Id=3.6A).

What package does the DMN10H120SFG-13 come in?

It comes in an 8-PowerVDFN surface mount package, specifically the POWERDI3333-8 package.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

Is the DMN10H120SFG-13 RoHS compliant?

Yes, it is RoHS3 compliant and lead-free, as verified in the datasheet.

What is the gate charge of this MOSFET?

The maximum gate charge (Qg) at Vgs=10V is 10.6nC.

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