DMN10H099SK3-13 N-Channel Enhancement Mode MOSFET with 100V drain-source voltage, 17A continuous drain current, and low on-resistance of 80mΩ at 10V. Surface mount TO-252 (DPAK) package.
Mfr Part #:

DMN10H099SK3-13

Available from 1 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
N-Channel Enhancement Mode MOSFET with 100V drain-source voltage, 17A continuous drain current, and low on-resistance of 80mΩ at 10V. Surface mount TO-252 (DPAK) package.
✓ Total Stock: 11,257 pcs
$ Price Range: $0.31 - $1.37

DMN10H099SK3-13 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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11,257 pcs
11257 pcs On Request 1 On Request On Request On Request On Request On Request

DMN10H099SK3-13 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
Weight

DMN10H099SK3-13 Description

Short technical summary and product information.

The DMN10H099SK3-13 is an N-Channel Enhancement Mode MOSFET from Diodes Incorporated, designed for high-efficiency power management applications. It features a maximum drain-source voltage (Vdss) of 100V and continuous drain current of 17A at case temperature 25°C. The on-resistance is 80mΩ maximum at Vgs=10V and 99mΩ maximum at Vgs=6V, enabling low conduction losses.

 

This MOSFET offers fast switching performance with a typical gate charge of 25.2nC at Vgs=10V and input capacitance of 1172pF at Vds=50V. It is avalanche rated with a maximum energy of 28.5mJ at L=1mH. The device is housed in a surface mount TO-252 (DPAK) package with matte tin terminal finish and weighs approximately 0.33 grams.

 

Operating temperature range is -55°C to 150°C junction temperature. The device is RoHS compliant, halogen and antimony free, and has a UL 94V-0 flammability rating. It is available in tape and reel packaging with a standard quantity of 2500 units per reel.

DMN10H099SK3-13 Quick Information

Product Type: N-Channel MOSFET
Series: DMN10H099SK3
Canonical Name: DMN10H099SK3-13 - N-Channel MOSFET, 100V, 17A, TO-252
Subcategory: Single N-Channel MOSFET

DMN10H099SK3-13 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Moisture Sensitivity Level 1
REACH Status: REACH Unaffected
Lead Free: Yes

DMN10H099SK3-13 Estimated Pricing

Qty Low High
1+ $1.37 $1.37
10+ $0.86 $0.86
25+ $0.72 $0.72
50+ $0.64 $0.64
100+ $0.56 $0.56
2,500+ $0.35 $0.35
7,500+ $0.31 $0.31

Estimated market price range - modelled values for guidance only, not live distributor offers.

DMN10H099SK3-13 Features

  • 100V drain-source voltage rating.
  • 17A continuous drain current at 25°C.
  • 80mΩ on-resistance at 10V gate drive.
  • Fast switching with 25.2nC gate charge.
  • Surface mount TO-252 DPAK package.

DMN10H099SK3-13 Applications

  • Ideal for power management circuits.
  • Used in DC-DC converter designs.
  • Suitable for high efficiency switching.

DMN10H099SK3-13 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the DMN10H099SK3-13?

The maximum drain-source voltage (Vdss) is 100V.

What package does the DMN10H099SK3-13 come in?

It is available in a surface mount TO-252-3 (DPAK) package.

What is the operating temperature range of the DMN10H099SK3-13?

The operating junction temperature range is -55°C to 150°C.

Is the DMN10H099SK3-13 RoHS compliant?

Yes, the DMN10H099SK3-13 is RoHS compliant and lead-free.

What is the maximum continuous drain current?

17A at case temperature 25°C, derated to 13A at 70°C.

What is the on-resistance of this MOSFET?

80mΩ maximum at Vgs=10V and Id=3.3A; 99mΩ maximum at Vgs=6V.

What is the gate threshold voltage?

Maximum 3V at drain current of 250µA.

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