| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
37,020 pcs
|
37020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Termination Style | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The DMN1053UCP4-7 is an N-Channel Enhancement Mode MOSFET designed for high-efficiency power transfer in space-constrained applications. It utilizes Diodes Incorporated's TR-MOS technology to achieve low on-state losses and fast switching performance.
Key electrical specifications include a maximum drain-source voltage of 12V, a continuous drain current of 2.7A (at TA=+25°C, Note 5) and up to 4.0A (Note 6), with a pulsed drain current rating of 8A. The typical on-resistance is 38mΩ at VGS=4.5V, with a maximum of 42mΩ. The device is driven by logic-level gate voltages, with a maximum gate threshold voltage of 700mV.
The DMN1053UCP4-7 is housed in an ultra-compact X3-DSN0808-4 Chip-Scale Package (CSP) with a footprint of 0.81mm x 0.81mm and a low profile height of 0.29mm. It is surface mountable and supplied in tape and reel packaging with 3,000 pieces per reel. The device is RoHS3 compliant, lead-free, and halogen and antimony free.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.86 | $0.86 |
| 10+ | $0.53 | $0.53 |
| 25+ | $0.44 | $0.44 |
| 50+ | $0.39 | $0.39 |
| 100+ | $0.34 | $0.34 |
| 3,000+ | $0.20 | $0.20 |
| 9,000+ | $0.18 | $0.18 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 12V.
The continuous drain current is 2.7A at TA=+25°C (Note 5) and 4.0A (Note 6).
The maximum on-resistance is 42mΩ at VGS=4.5V and ID=1A, with a typical value of 38mΩ.
It is available in an X3-DSN0808-4 Chip-Scale Package (CSP).
The operating junction temperature range is -55°C to +150°C.
Yes, it is RoHS3 compliant.
The maximum gate threshold voltage is 700mV at ID=250µA.