DMN1045UFR4-7 N-Channel enhancement mode MOSFET with 12V drain-source voltage rating and 3.2A continuous drain current. Features low on-resistance of 45mOhm at 4.5V gate drive.
Mfr Part #:

DMN1045UFR4-7

Available from 1 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
N-Channel enhancement mode MOSFET with 12V drain-source voltage rating and 3.2A continuous drain current. Features low on-resistance of 45mOhm at 4.5V gate drive.
✓ Total Stock: 322,020 pcs
$ Price Range: $0.10 - $0.54

DMN1045UFR4-7 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
322,020 pcs
322020 pcs On Request 1 On Request On Request On Request On Request On Request

DMN1045UFR4-7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

DMN1045UFR4-7 Description

Short technical summary and product information.

The DMN1045UFR4-7 is an N-channel enhancement mode MOSFET from Diodes Incorporated. It is designed for low on-resistance and fast switching, suitable for power management applications. The device has a drain-source voltage rating of 12V and can handle a continuous drain current of 3.2A at 25°C ambient temperature. The typical on-resistance is 45mOhm at 4.5V gate drive, with values of 64mOhm, 85mOhm, and 100mOhm at 2.5V, 1.8V, and 1.5V respectively. The gate threshold voltage is 1V maximum. The MOSFET is housed in a compact X2-DFN1010-3 surface-mount package, which has a small footprint of 1.0mm x 1.0mm and a low profile. It is RoHS3 compliant, lead-free, halogen-free, and MSL Level 1. Typical applications include power management functions, load switching, and backlighting.

DMN1045UFR4-7 Quick Information

Product Type: MOSFET
Canonical Name: DMN1045UFR4-7 N-Channel MOSFET
Subcategory: Single N-Channel MOSFET

DMN1045UFR4-7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 1 (J-STD-020)
REACH Status: REACH Unaffected
Lead Free: Yes

DMN1045UFR4-7 Estimated Pricing

Qty Low High
1+ $0.54 $0.54
10+ $0.33 $0.33
25+ $0.28 $0.28
50+ $0.24 $0.24
100+ $0.21 $0.21
3,000+ $0.12 $0.12
9,000+ $0.10 $0.10

Estimated market price range - modelled values for guidance only, not live distributor offers.

DMN1045UFR4-7 Features

  • Low on-resistance of 45mOhm at 4.5V gate drive.
  • Compact X2-DFN1010-3 surface-mount package.
  • ESD protected gate for improved reliability.
  • RoHS compliant and halogen-free green device.

DMN1045UFR4-7 Applications

  • Power management functions in portable devices.
  • Load switching applications.
  • Backlighting driver circuits.

DMN1045UFR4-7 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the operating voltage rating?

The drain-to-source voltage (Vdss) is 12V.

What package is the DMN1045UFR4-7 available in?

It is available in an X2-DFN1010-3 surface-mount package.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

Is the DMN1045UFR4-7 RoHS compliant?

Yes, it is RoHS3 compliant.

What is the maximum continuous drain current?

The continuous drain current is 3.2A at 25°C ambient with Vgs=4.5V.

What is the on-resistance?

The maximum on-resistance is 45mOhm at 4.5V gate drive.

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