DMN1032UCB4-7 N-Channel MOSFET with 12V drain-source voltage, 4.8A continuous drain current, and 26mOhm on-resistance at 4.5V. Surface-mount in U-WLB1010-4 package.
Mfr Part #:

DMN1032UCB4-7

Available from 2 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
N-Channel MOSFET with 12V drain-source voltage, 4.8A continuous drain current, and 26mOhm on-resistance at 4.5V. Surface-mount in U-WLB1010-4 package.
✓ Total Stock: 231,007 pcs
$ Price Range: $0.09

DMN1032UCB4-7 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
231,000 pcs
231000 pcs On Request 1 On Request On Request 18+ On Request On Request
Non-Authorised Inventory information
7 pcs
7 pcs On Request 1 On Request On Request On Request On Request On Request

DMN1032UCB4-7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

DMN1032UCB4-7 Description

Short technical summary and product information.

The DMN1032UCB4-7 is an N-Channel MOSFET from Diodes Incorporated, designed for low-voltage switching applications. It features a drain-source voltage (Vdss) of 12V and a continuous drain current of 4.8A at ambient temperature. The on-resistance (Rds(on)) is typically 26mOhm at a gate drive of 4.5V and 1A drain current, ensuring efficient power handling. The device is optimized for low gate drive voltages of 1.8V and 4.5V, making it suitable for battery-powered and portable electronics. The maximum gate threshold voltage is 1.2V at 250µA. The MOSFET is housed in a compact 4-UFBGA, WLBGA package (U-WLB1010-4) for surface-mount assembly, occupying minimal board space. It operates over a junction temperature range of -55°C to 150°C, with a maximum power dissipation of 900mW. This device is RoHS3 compliant and REACH unaffected, ensuring environmental compliance. Typical applications include load switching, power management, and DC-DC converter circuits where low on-resistance and small footprint are critical.

DMN1032UCB4-7 Quick Information

Product Type: MOSFET
Canonical Name: N-Channel MOSFET, 12V, 4.8A, U-WLB1010-4
Subcategory: N-Channel MOSFET

DMN1032UCB4-7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

DMN1032UCB4-7 Estimated Pricing

Qty Low High
3,000+ $0.09 $0.09

Estimated market price range - modelled values for guidance only, not live distributor offers.

DMN1032UCB4-7 Features

  • 12V drain-source voltage rating.
  • 4.8A continuous drain current capability.
  • Low on-resistance of 26mOhm.
  • Operates with 1.8V and 4.5V gate drive.
  • Compact U-WLB1010-4 surface-mount package.

DMN1032UCB4-7 Applications

  • Ideal for low-voltage load switching.
  • Suitable for power management in portable devices.
  • Used in DC-DC converter circuits.
  • Perfect for battery-powered applications.

DMN1032UCB4-7 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the DMN1032UCB4-7?

12V.

What package is the DMN1032UCB4-7 available in?

4-UFBGA, WLBGA (U-WLB1010-4).

What is the operating temperature range of the DMN1032UCB4-7?

-55°C to 150°C (junction).

Is the DMN1032UCB4-7 RoHS compliant?

Yes, RoHS3 compliant.

What is the on-resistance of the DMN1032UCB4-7?

26mOhm at 1A, 4.5V.

What is the gate threshold voltage of the DMN1032UCB4-7?

1.2V maximum at 250µA.

What is the gate charge of the DMN1032UCB4-7?

4.5nC at 4.5V.

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