| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
231,000 pcs
|
231000 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request | |
|
7 pcs
|
7 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The DMN1032UCB4-7 is an N-Channel MOSFET from Diodes Incorporated, designed for low-voltage switching applications. It features a drain-source voltage (Vdss) of 12V and a continuous drain current of 4.8A at ambient temperature. The on-resistance (Rds(on)) is typically 26mOhm at a gate drive of 4.5V and 1A drain current, ensuring efficient power handling. The device is optimized for low gate drive voltages of 1.8V and 4.5V, making it suitable for battery-powered and portable electronics. The maximum gate threshold voltage is 1.2V at 250µA. The MOSFET is housed in a compact 4-UFBGA, WLBGA package (U-WLB1010-4) for surface-mount assembly, occupying minimal board space. It operates over a junction temperature range of -55°C to 150°C, with a maximum power dissipation of 900mW. This device is RoHS3 compliant and REACH unaffected, ensuring environmental compliance. Typical applications include load switching, power management, and DC-DC converter circuits where low on-resistance and small footprint are critical.
| Qty | Low | High |
|---|---|---|
| 3,000+ | $0.09 | $0.09 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
12V.
4-UFBGA, WLBGA (U-WLB1010-4).
-55°C to 150°C (junction).
Yes, RoHS3 compliant.
26mOhm at 1A, 4.5V.
1.2V maximum at 250µA.
4.5nC at 4.5V.