DMN1019USN-7 This MOSFET is a 12V N-Channel enhancement mode device with a maximum continuous drain current of 9.3A. It features low on-resistance down to 10mΩ at 4.5V gate drive, ideal for power management applications.
Mfr Part #:

DMN1019USN-7

Available from 4 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
This MOSFET is a 12V N-Channel enhancement mode device with a maximum continuous drain current of 9.3A. It features low on-resistance down to 10mΩ at 4.5V gate drive, ideal for power management applications.
✓ Total Stock: 341,483 pcs
$ Price Range: $0.13 - $0.68

DMN1019USN-7 Available from 4 distributors

✓ Authorised
✓ Non-Authorised

DMN1019USN-7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
Weight

DMN1019USN-7 Description

Short technical summary and product information.

The DMN1019USN-7 is a 12V N-Channel enhancement mode MOSFET from Diodes Incorporated, designed for low-voltage power switching and management. It delivers a continuous drain current of 9.3A at 25°C (7.8A at 70°C) and supports pulsed currents up to 70A. The device achieves a maximum on-resistance of 10mΩ at VGS = 4.5V, with progressively higher values at lower gate drives: 12mΩ at 2.5V, 14mΩ at 1.8V, 18mΩ at 1.5V, and 41mΩ at 1.2V. Gate threshold voltage is 800mV maximum at ID = 250µA. Switching performance is supported by a gate charge of 50.6nC (max) at VGS = 8V and input capacitance of 2426pF (max) at VDS = 10V. Maximum power dissipation is 680mW at 25°C ambient, with a junction-to-ambient thermal resistance of 160°C/W. The device operates over a junction temperature range of -55°C to 150°C. Housed in a SC59 surface mount package (also known as TO-236-3, SOT-23-3), it is supplied on Tape & Reel with 3000 units per reel. The part is RoHS3 compliant, totally lead-free, and halogen and antimony free.

DMN1019USN-7 Quick Information

Product Type: MOSFET
Canonical Name: DMN1019USN-7 - 12V N-Channel MOSFET, 9.3A, SC59
Subcategory: N-Channel MOSFET

DMN1019USN-7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

DMN1019USN-7 Estimated Pricing

Qty Low High
1+ $0.68 $0.68
10+ $0.42 $0.42
25+ $0.35 $0.35
50+ $0.31 $0.31
100+ $0.27 $0.27
3,000+ $0.15 $0.15
9,000+ $0.13 $0.13

Estimated market price range - modelled values for guidance only, not live distributor offers.

DMN1019USN-7 Features

  • 12V maximum drain-source voltage rating.
  • 9.3A continuous drain current at 25°C.
  • Ultra-low 10mΩ on-resistance at 4.5V.
  • Operates from -55°C to 150°C junction.
  • SC59 surface mount package, RoHS compliant.

DMN1019USN-7 Applications

  • Ideal for load switch applications.
  • Used in DC-DC converter circuits.
  • Suitable for power management functions.

DMN1019USN-7 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage (Vdss)?

12V.

What package is the DMN1019USN-7 available in?

Available in SC59 surface mount package (also known as TO-236-3, SOT-23-3).

What is the operating temperature range?

-55°C to 150°C junction temperature.

Is the DMN1019USN-7 RoHS compliant?

Yes, it is RoHS3 compliant and totally lead-free per datasheet.

What is the standard packaging quantity?

3000 units per reel (Tape & Reel).

What gate drive voltages are supported?

The device supports drive voltages from 1.2V (minimum Rds(on)) to 2.5V (maximum Rds(on)).

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