DMN1008UFDF-7 N-channel enhancement mode MOSFET from Diodes Incorporated. Features 12V drain-source voltage, 12.2A continuous drain current, and low on-resistance of 8mΩ.
Mfr Part #:

DMN1008UFDF-7

Available from 1 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
N-channel enhancement mode MOSFET from Diodes Incorporated. Features 12V drain-source voltage, 12.2A continuous drain current, and low on-resistance of 8mΩ.
✓ Total Stock: 10,020 pcs
$ Price Range: $0.16 - $0.79

DMN1008UFDF-7 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
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10,020 pcs
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DMN1008UFDF-7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

DMN1008UFDF-7 Description

Short technical summary and product information.

The DMN1008UFDF-7 is a 12V N-channel enhancement mode MOSFET from Diodes Incorporated, designed for high-efficiency power management applications. It features a low on-resistance of 8mΩ at VGS=4.5V and 11.6mΩ at VGS=2.5V, enabling minimal conduction losses.

 

With a maximum drain current of 12.2A at +25°C, this MOSFET is well-suited for battery management, power management functions, and DC-DC converter circuits. The device offers fast switching speed and low gate threshold voltage, making it ideal for low-profile applications.

 

The MOSFET is housed in a compact U-DFN2020-6 (Type F) package with a 0.6mm profile, minimizing PCB footprint to 4mm². The package is molded with green molding compound and is RoHS compliant. The part is also halogen- and antimony-free, and qualified to JEDEC standards for high reliability.

 

Typical applications include battery protection circuits, load switches, and power conversion in portable electronics. An automotive-compliant variant (DMN1008UFDFQ) is available separately.

DMN1008UFDF-7 Quick Information

Product Type: N-Channel MOSFET
Canonical Name: DMN1008UFDF-7 N-Channel Enhancement Mode MOSFET
Subcategory: Single FETs, MOSFETs

DMN1008UFDF-7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1
REACH Status: Compliant
Lead Free: Yes

DMN1008UFDF-7 Estimated Pricing

Qty Low High
1+ $0.79 $0.79
10+ $0.49 $0.49
25+ $0.41 $0.41
50+ $0.35 $0.35
100+ $0.31 $0.31
3,000+ $0.18 $0.18
9,000+ $0.16 $0.16

Estimated market price range - modelled values for guidance only, not live distributor offers.

DMN1008UFDF-7 Features

  • N-channel enhancement mode MOSFET.
  • 12V drain-source voltage rating.
  • Low on-resistance: 8 mΩ at 4.5V.
  • Compact U-DFN2020-6 package.
  • RoHS compliant and halogen-free.

DMN1008UFDF-7 Applications

  • Battery management applications.
  • DC-DC converter circuits.
  • Power management functions.

DMN1008UFDF-7 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the DMN1008UFDF-7?

The drain-source voltage (Vds) is rated at 12V.

What is the package type?

The package is U-DFN2020-6 (Type F).

Is the DMN1008UFDF-7 RoHS compliant?

Yes, it is totally lead-free and fully RoHS compliant.

What is the maximum continuous drain current?

The maximum continuous drain current is 12.2A at Ta = +25°C.

What is the drain-source on-resistance?

The typical on-resistance is 8mΩ at VGS=4.5V and 11.6mΩ at VGS=2.5V.

What is the required gate drive voltage?

The gate drive voltage ranges from 2.5V to 4.5V.

What technology is used?

It is an N-channel enhancement mode MOSFET with metal oxide technology.

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