DMN1004UFV-7 N-Channel MOSFET, 12V drain-source voltage, 70A continuous drain current, low on-resistance 3.8mOhm at 4.5V gate drive. Surface mount PowerDI3333-8 package.
Mfr Part #:

DMN1004UFV-7

Available from 1 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
N-Channel MOSFET, 12V drain-source voltage, 70A continuous drain current, low on-resistance 3.8mOhm at 4.5V gate drive. Surface mount PowerDI3333-8 package.
✓ Total Stock: 21,000 pcs
$ Price Range: $0.26 - $1.15

DMN1004UFV-7 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
21,000 pcs
21000 pcs On Request 1 On Request On Request On Request On Request On Request

DMN1004UFV-7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Termination Style
Vgs (Max)
Vgs(th) (Max) @ Id
Weight

DMN1004UFV-7 Description

Short technical summary and product information.

The DMN1004UFV-7 is an N-Channel Enhancement Mode MOSFET from Diodes Incorporated, designed for high-efficiency power management applications. It features a maximum drain-to-source voltage of 12V and a continuous drain current of 70A at Tc=25°C. The device offers low on-resistance of 3.8mOhm maximum at Vgs=4.5V and Id=15A, with a typical gate charge of 47nC at Vgs=8V. Input capacitance is 2385pF at Vds=6V. The MOSFET is housed in a compact PowerDI3333-8 (Type UX) surface mount package, occupying only 33% of the board area of an SO-8. It is ESD protected and supports operating junction temperatures from -55°C to 150°C. Applications include power management functions, DC-DC converters, and battery circuits. The device is totally lead-free, fully RoHS compliant, and halogen- and antimony-free.

DMN1004UFV-7 Quick Information

Product Type: N-Channel MOSFET
Canonical Name: DMN1004UFV-7
Subcategory: Single MOSFET

DMN1004UFV-7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Lead Free

DMN1004UFV-7 Estimated Pricing

Qty Low High
1+ $1.15 $1.15
10+ $0.72 $0.72
25+ $0.60 $0.60
50+ $0.53 $0.53
100+ $0.47 $0.47
2,000+ $0.30 $0.30
6,000+ $0.26 $0.26

Estimated market price range - modelled values for guidance only, not live distributor offers.

DMN1004UFV-7 Features

  • 12V drain-source voltage rating.
  • 70A continuous drain current at 25°C.
  • Low on-resistance of 3.8mOhm typical.
  • PowerDI3333-8 surface mount package.
  • ESD protected gate.

DMN1004UFV-7 Applications

  • Power management functions in portable devices.
  • DC-DC converter circuits.
  • Battery power switching applications.

DMN1004UFV-7 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage?

12 V.

What package is the DMN1004UFV-7 available in?

PowerDI3333-8 (Type UX) surface mount.

What is the operating temperature range?

-55°C to 150°C (junction).

Is this part RoHS compliant?

Yes, totally lead-free and fully RoHS compliant.

What is the maximum on-resistance?

3.8mOhm at Vgs=4.5V, Id=15A; 5.1mOhm at Vgs=2.5V.

What is the maximum gate charge?

47 nC at Vgs=8V.

What is the maximum continuous drain current?

70A at Tc=25°C, Vgs=4.5V; 55A at Tc=70°C.

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