DMN1004UFV-13 N-Channel enhancement mode MOSFET with 12V drain-source voltage, 70A continuous drain current, and ultra-low Rds(on) of 3.8mΩ at 4.5V. Housed in a compact PowerDI3333-8 surface mount package.
Mfr Part #:

DMN1004UFV-13

Available from 1 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
N-Channel enhancement mode MOSFET with 12V drain-source voltage, 70A continuous drain current, and ultra-low Rds(on) of 3.8mΩ at 4.5V. Housed in a compact PowerDI3333-8 surface mount package.
✓ Total Stock: 34,020 pcs
$ Price Range: $0.23 - $1.09

DMN1004UFV-13 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
34,020 pcs
34020 pcs On Request 1 On Request On Request On Request On Request On Request

DMN1004UFV-13 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
Weight

DMN1004UFV-13 Description

Short technical summary and product information.

The DMN1004UFV-13 is a 12V N-Channel enhancement mode MOSFET from Diodes Incorporated, designed for high-efficiency power management applications. It features a maximum continuous drain current of 70A at Tc=+25°C and a pulsed drain current rating of 80A.

 

Key electrical characteristics include a low on-resistance (Rds(on)) of 3.8mΩ maximum at Vgs=4.5V and Id=15A, and 5.1mΩ maximum at Vgs=2.5V. The gate threshold voltage is 1V maximum at Id=250µA. The device also offers ESD protected gate and is halogen and antimony free.

 

Packaged in the compact PowerDI3333-8 (Type UX) surface mount package, it occupies only 33% of the board area of an SO-8 package. The operating junction temperature range is -55°C to +150°C. The component is RoHS compliant and lead-free.

DMN1004UFV-13 Quick Information

Product Type: MOSFET (Metal Oxide)
Canonical Name: DMN1004UFV-13, 12V N-Channel Enhancement Mode MOSFET
Subcategory: Single N-Channel MOSFET

DMN1004UFV-13 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 1
REACH Status: REACH Unaffected
Lead Free: Lead-Free

DMN1004UFV-13 Estimated Pricing

Qty Low High
1+ $1.09 $1.09
10+ $0.68 $0.68
25+ $0.57 $0.57
50+ $0.50 $0.50
100+ $0.44 $0.44
3,000+ $0.26 $0.26
9,000+ $0.23 $0.23

Estimated market price range - modelled values for guidance only, not live distributor offers.

DMN1004UFV-13 Features

  • 12V drain-source voltage, 70A continuous drain current.
  • Ultra-low Rds(on) of 3.8mΩ at 4.5V gate drive.
  • ESD protected gate for enhanced reliability.
  • Halogen and antimony free green device.
  • Compact PowerDI3333-8 surface mount package.

DMN1004UFV-13 Applications

  • Ideal for DC-DC converter power stages.
  • Used in battery management and protection circuits.
  • Suitable for load switching in portable devices.
  • Applicable in high-efficiency power management systems.

DMN1004UFV-13 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the DMN1004UFV-13?

The maximum drain-source voltage (Vdss) is 12V.

What is the maximum continuous drain current at 25°C?

The maximum continuous drain current (Tc=+25°C) is 70A.

What is the package type for the DMN1004UFV-13?

It is packaged in PowerDI3333-8 (Type UX) surface mount package.

What is the operating temperature range?

The operating junction temperature range is -55°C to +150°C.

Is the DMN1004UFV-13 RoHS compliant?

Yes, it is RoHS compliant and lead-free.

What is the maximum Rds(on) at 4.5V gate drive?

The maximum Rds(on) is 3.8mΩ at Id=15A and Vgs=4.5V.

What is the gate threshold voltage?

The maximum gate threshold voltage (Vgs(th)) is 1V at Id=250µA.

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