| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,107 pcs
|
3107 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The DMMT5551S-7-F is a dual NPN matched pair transistor from Diodes Incorporated, designed for low power amplification and switching applications. It features a maximum collector-emitter voltage of 160V and continuous collector current of 200mA. The transistor pair is intrinsically matched with 2% tolerance on hFE, VCE(SAT), and VBE(SAT), ensuring consistent performance in differential circuits.
Key electrical characteristics include a minimum DC current gain (hFE) of 80 at Ic=1mA, Vce=5V, a typical transition frequency of 300MHz, and a low collector-emitter saturation voltage of 200mV at Ib=5mA, Ic=50mA. The device is housed in a surface mount SOT-26 package with gull wing terminals and matte tin finish. It is rated for operation from -55°C to 150°C junction temperature and dissipates up to 300mW.
The DMMT5551S-7-F is RoHS3 compliant and has a moisture sensitivity level of 1 per J-STD-020C. A complementary PNP type, DMMT5401, is also available. This transistor is suitable for use in differential amplifiers, current mirrors, and other circuits requiring matched transistor characteristics.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.55 | $0.55 |
| 10+ | $0.34 | $0.34 |
| 25+ | $0.28 | $0.28 |
| 50+ | $0.25 | $0.25 |
| 100+ | $0.22 | $0.22 |
| 3,000+ | $0.12 | $0.12 |
| 9,000+ | $0.10 | $0.10 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum VCEO is 160V.
It is available in a surface mount SOT-26 package.
The operating junction temperature range is -55°C to 150°C.
Yes, it is RoHS3 compliant and lead-free.
The pair has 2% matched tolerance on hFE, VCE(SAT), and VBE(SAT).
The complementary PNP type is DMMT5401.