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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,913 pcs
|
1913 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base Current (IB) | |
| Base-Emitter Saturation Voltage (Vbe Sat) | |
| Case Material | |
| Collector Base Cutoff Current (Maximum @ VCB = -25 V, RBE = 200 Ω, TA = 125 °C) | |
| Collector Base Cutoff Current (Maximum @ VCB = -25 V, RBE = 200 Ω, TA = 25 °C) | |
| Collector Emitter Saturation Voltage (Maximum @ IC = -1.2 A, IB = -20 mA) | |
| Collector Emitter Saturation Voltage (Typical/Maximum @ IC = -3 A, IB = -300 mA) | |
| Collector-Base Voltage (VCBO) | |
| Collector-Emitter Breakdown Voltage (V(BR)CEO) | |
| Current | |
| DC Current Gain (Minimum @ VCE = -1 V, IC = -1.2 A) | |
| DC Current Gain (Minimum @ VCE = -1 V, IC = -3 A) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter-Base Breakdown Voltage (V(BR)EBO) | |
| Emitter-Base Cutoff Current (IEBO) | |
| Emitter-Base Voltage (VEBO) | |
| Equivalent On-Resistance (RCE(SAT)) | |
| Flammability Rating | |
| Frequency | |
| Lead Finish | |
| Mounting Type | |
| Operating Temperature | |
| Peak Pulse Current (ICM) | |
| Power | |
| Power Dissipation (Maximum @ TA = 25 °C, FR -4 PCB with 1 inch² copper pad layout) | |
| Power Dissipation (Maximum @ TC=25 °C) | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Thermal Resistance Junction To Ambient (@ TA = 25 °C, FR -4 PCB with 1 inch² copper pad layout) | |
| Thermal Resistance Junction To Ambient (@ TA = 25 °C, FR -4 PCB with minimum recommended pad layout) | |
| Thermal Resistance Junction-to-Case (RθJC) | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage | |
| Weight |
The DMJT9435-13 is a PNP low VCE(SAT) surface mount transistor designed for medium power switching and amplification applications. It is housed in a SOT-223 package and is ideally suited for automated assembly processes.
Key electrical specifications include a maximum collector-emitter voltage of -30V, a continuous collector current of -3A, and a peak pulse current of -5A. The device offers a DC current gain (hFE) of 125 minimum at 800mA and a transition frequency of 160 MHz. The collector-emitter saturation voltage is as low as -100 mV typical at 800mA.
The transistor is rated for a maximum power dissipation of 1.2W on a standard FR-4 PCB with minimum pad layout, and up to 3W when the case temperature is held at 25°C. It operates over a junction temperature range of -55°C to 150°C.
The DMJT9435-13 is RoHS3 compliant and lead-free by design. The package is molded plastic with a UL 94V-0 flammability rating and moisture sensitivity level 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.82 | $0.82 |
| 10+ | $0.51 | $0.51 |
| 25+ | $0.42 | $0.42 |
| 50+ | $0.37 | $0.37 |
| 100+ | $0.33 | $0.33 |
| 2,500+ | $0.20 | $0.20 |
| 7,500+ | $0.17 | $0.17 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) is -30V.
The maximum continuous collector current (IC) is -3A.
The DMJT9435-13 is available in a SOT-223 surface mount package.
The operating junction temperature range is -55°C to 150°C.
Yes, the DMJT9435-13 is RoHS3 compliant and lead-free by design.
The minimum DC current gain (hFE) is 125 at VCE = -1V and IC = -0.8A.
The power dissipation is 1.2W at 25°C ambient on a standard FR-4 PCB with minimum pad layout, and up to 3W at 25°C case temperature.