DMHT6016LFJ-13 The DMHT6016LFJ-13 is a 60V N-Channel MOSFET H-Bridge from Diodes Incorporated. It features 4 N-Channel MOSFETs with 14.8A continuous drain current and 22mΩ on-resistance at 10V.
Mfr Part #:

DMHT6016LFJ-13

Available from 1 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
The DMHT6016LFJ-13 is a 60V N-Channel MOSFET H-Bridge from Diodes Incorporated. It features 4 N-Channel MOSFETs with 14.8A continuous drain current and 22mΩ on-resistance at 10V.
✓ Total Stock: 13,020 pcs
$ Price Range: $0.90 - $3.32

DMHT6016LFJ-13 Available from 1 distributor

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✓ Non-Authorised
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DMHT6016LFJ-13 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Technology
Vgs(th) (Max) @ Id
Weight

DMHT6016LFJ-13 Description

Short technical summary and product information.

The DMHT6016LFJ-13 is a 60V N-Channel enhancement mode MOSFET H-Bridge from Diodes Incorporated, housed in a V-DFN5045-12 surface mount package. It integrates four N-Channel MOSFETs configured as an H-bridge, making it suitable for motor control, DC-DC converters, and power management applications.

 

Key electrical specifications include a minimum drain-source breakdown voltage of 60V and a continuous drain current rating of 14.8A (Ta) with a pulsed current capability of 60A. The on-resistance is typically 22mΩ at VGS=10V and 30mΩ at VGS=4.5V. The gate threshold voltage is 3V maximum at 250μA. The device features low input capacitance of 864pF at 30V and a gate charge of 8.4nC, enabling fast switching.

 

The MOSFET array is rated for power dissipation of 1.16W with a junction-to-ambient thermal resistance of 108°C/W (steady state). It operates over a junction temperature range of -55°C to 150°C. The package is a V-DFN5045-12 (12-VDFN Exposed Pad) with matte tin plated terminals, and it is supplied in tape and reel packaging with 3000 pieces per reel.

 

The DMHT6016LFJ-13 is fully RoHS compliant, lead-free, and halogen-free, meeting current environmental standards. It is designed for efficient power conversion and motor drive applications where low on-resistance and compact footprint are required.

DMHT6016LFJ-13 Quick Information

Product Type: MOSFET H-Bridge
Series: DMHT6016LFJ
Canonical Name: DMHT6016LFJ-13 60V 4 N-Channel MOSFET H-Bridge, 14.8A, V-DFN5045-12
Subcategory: N-Channel MOSFET Array

DMHT6016LFJ-13 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Lead Free

DMHT6016LFJ-13 Estimated Pricing

Qty Low High
1+ $3.32 $3.32
10+ $2.15 $2.15
25+ $1.84 $1.84
50+ $1.64 $1.64
100+ $1.48 $1.48
3,000+ $0.99 $0.99
9,000+ $0.90 $0.90

Estimated market price range - modelled values for guidance only, not live distributor offers.

DMHT6016LFJ-13 Features

  • 60V drain-source breakdown voltage.
  • Four N-channel MOSFETs in H-bridge.
  • Low on-resistance of 22 mΩ at 10V.
  • Surface mount V-DFN5045-12 package.
  • RoHS compliant and halogen free.

DMHT6016LFJ-13 Applications

  • Ideal for motor control applications.
  • Used in DC-DC converter circuits.
  • Suitable for power management systems.
  • Designed for H-bridge topologies.

DMHT6016LFJ-13 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage of the DMHT6016LFJ-13?

60V minimum.

What is the package type?

V-DFN5045-12 (12-VDFN Exposed Pad) surface mount package.

What is the operating temperature range?

-55°C to 150°C (junction temperature).

Is the DMHT6016LFJ-13 RoHS compliant?

Yes, it is RoHS3 compliant, lead-free, and halogen-free per the datasheet.

What is the continuous drain current rating?

14.8A (Ta) (see datasheet for temperature derating).

What is the gate threshold voltage?

3V maximum at VDS=VGS, ID=250μA.

What is the on-resistance at typical gate drive?

22mΩ at VGS=10V, ID=10A; 30mΩ at VGS=4.5V, ID=8.7A.

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