| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
58,520 pcs
|
58520 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Termination Style | |
| Vgs(th) (Max) @ Id | |
| Weight |
The DMG9933USD-13 is a dual P-channel enhancement mode MOSFET designed for power management applications requiring low on-resistance and efficient switching. Each MOSFET is rated for a maximum drain-source voltage of -20V and a continuous drain current of -4.6A at 25°C. The device achieves a low on-resistance of 75mOhm at Vgs=-4.5V, making it suitable for high-efficiency DC-DC converters and backlighting circuits.
Key electrical characteristics include a maximum gate threshold voltage of 1.1V at 250µA drain current, logic-level gate drive capability, and typical input capacitance of 608pF at Vds=6V. The total gate charge is only 6.5nC at Vgs=4.5V, enabling fast switching speeds. The device is housed in an industry-standard 8-SOIC package with gull-wing leads, suitable for surface mount assembly.
The MOSFET is fully RoHS3 compliant, lead-free, and halogen-free. It meets UL 94V-0 flammability rating and moisture sensitivity level 1 per J-STD-020. The package weighs approximately 0.072g and is supplied in tape and reel packaging with 2500 units per reel.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.79 | $0.79 |
| 10+ | $0.49 | $0.49 |
| 25+ | $0.41 | $0.41 |
| 50+ | $0.36 | $0.36 |
| 100+ | $0.31 | $0.31 |
| 2,500+ | $0.19 | $0.19 |
| 7,500+ | $0.16 | $0.16 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 20V.
It comes in an 8-SOIC (0.154", 3.90mm Width) surface-mount package, also referred to as SO-8.
The junction operating temperature range is -55°C to +150°C.
Yes, it is RoHS3 compliant as verified from the datasheet.
The continuous drain current (Id) is 4.6A at 25°C ambient temperature.
The maximum on-resistance is 75mOhm at Vgs=-4.5V (Id=-4.8A) and 110mOhm at Vgs=-2.5V (Id=-2.9A).
Yes, the FET feature is 'Logic Level Gate', with a maximum gate threshold voltage of 1.1V at Id=250µA.