Mfr Part #:

DMG9926USD-13

DMG9926USD-13 is a dual N-channel enhancement mode MOSFET from Diodes Incorporated, rated for 20V drain-source voltage and 8A continuous current. It features low on-resistance down to 24mΩ at 4.5V gate drive.

✓ Total Stock: 500 pcs

$ Price Range: $0.19 - $0.90

DMG9926USD-13 Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
PROSOFT ELECTRONICS ✓ Non-Authorised Inventory information	500 pcs On Request	500 pcs	On Request	1	On Request	On Request	24+	On Request	On Request

DMG9926USD-13 Description

Short technical summary and product information.

The DMG9926USD-13 is a dual N-channel enhancement mode field effect transistor (MOSFET) designed by Diodes Incorporated. It is configured as two independent N-channel MOSFETs in a single SO-8 package, each with a maximum drain-source breakdown voltage of 20V and continuous drain current of 8A. The device features very low on-resistance: 24mΩ at VGS=4.5V (ID=8A), 29mΩ at VGS=2.5V (ID=5.5A), and 37mΩ at VGS=1.8V (ID=4.8A). The gate threshold voltage is a maximum of 900mV at ID=250µA, making it suitable for logic-level gate drive applications. Input capacitance is 867pF max at VDS=15V, and total gate charge is 8.8nC max at VGS=4.5V, enabling fast switching. The MOSFET is qualified to AEC-Q101 standards for high reliability, suitable for automotive and industrial applications. It is fully RoHS compliant, lead-free, halogen and antimony free ('Green' device). The package is 8-SOIC (0.154", 3.90mm width) with matte tin finish, surface mount. Operating temperature range is -55°C to +150°C. Typical applications include power management functions and DC-DC converters.

DMG9926USD-13 Quick Information

Product Type: MOSFET Array

Series: DMG9926USD

Canonical Name: DMG9926USD-13 Dual N-Channel MOSFET, 20V, 8A, SO-8

Subcategory: Dual N-Channel MOSFET

DMG9926USD-13 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): Level 1 (Unlimited)

REACH Status: REACH Unaffected

Lead Free: Lead-Free

DMG9926USD-13 Estimated Pricing

Qty	Low	High
1+	$0.90	$0.90
10+	$0.56	$0.56
25+	$0.47	$0.47
50+	$0.41	$0.41
100+	$0.36	$0.36
2,500+	$0.22	$0.22
7,500+	$0.19	$0.19

Estimated market price range - modelled values for guidance only, not live distributor offers.

DMG9926USD-13 Features

Dual N-channel MOSFET in SO-8 package.
20V drain-source breakdown voltage.
Low on-resistance: 24mΩ at 4.5V gate drive.
Logic level gate threshold (900mV max).
AEC-Q101 qualified for automotive use.

DMG9926USD-13 Applications

Efficient power management in DC-DC converters.
Suitable for automotive electronics modules.
Used in battery-powered portable devices.

DMG9926USD-13 FAQs

7 frequently asked questions generated from this part’s specifications.

What is the package type of the DMG9926USD-13?

8-SOIC (0.154", 3.90mm width) surface mount package.

What is the operating temperature range?

-55°C to +150°C (junction temperature).

Is the DMG9926USD-13 RoHS compliant?

Yes, it is fully RoHS3 compliant, lead-free, and halogen/antimony free.

What is the maximum drain-source voltage?

20V.

What is the continuous drain current rating?

8A per channel.

What is the gate threshold voltage?

900mV maximum at ID=250µA.

What is the on-resistance at 4.5V gate drive?

24mΩ maximum at VGS=4.5V, ID=8A.

Category	Transistors - FETs, MOSFETs - Arrays
Manufacturer Name	Diodes Incorporated
AEC Qualified	Yes
Automotive Grade	Yes
Configuration	2 N-Channel (Dual)
Current	8 A
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	8.8 nC
Halogen Free	Yes
Input Capacitance (Ciss) (Max) @ Vds	867 pF
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C
Power	1.3 W
Rds On (Max) @ Id, Vgs	24 mΩ
Supplier Device Package	8-SO
Tape & Reel	Tape & Reel
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	900 mV
Weight	0.072 g