| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
31,020 pcs
|
31020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
13,500 pcs
|
13500 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request | |
|
4,173 pcs
|
4173 pcs | On Request | 1 | On Request | On Request | 1441+ | On Request | On Request | |
|
3,480 pcs
|
3480 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id | |
| Weight |
The DMG6602SVT-7 is a complementary enhancement mode MOSFET pair from Diodes Incorporated, integrating an N-channel and a P-channel MOSFET in a single TSOT-26 package. This device is designed for high-efficiency power management applications, offering low on-resistance and fast switching performance.
Key electrical characteristics include a drain-source voltage of 30V for the N-channel and -30V for the P-channel. The N-channel MOSFET delivers a continuous drain current of 3.4A at Vgs=10V and 2.7A at Vgs=4.5V, with a maximum on-resistance of 60mOhm at 10V. The P-channel MOSFET provides -2.8A at Vgs=-10V and -2.3A at Vgs=-4.5V, with a maximum on-resistance of 95mOhm at -10V. Gate threshold voltage is 2.3V max, and the device supports logic-level gate drive at 4.5V.
The part is supplied in a surface-mount TSOT-26 package with a green molding compound, matte tin finish, and weighs approximately 0.013 grams. It is RoHS 3 compliant, halogen-free, and qualified to AEC-Q101 standards for automotive reliability. The device is packaged in tape and reel with 3000 units per reel.
Typical applications include DC-DC converters, power management functions, and backlighting circuits where complementary MOSFETs are required. The DMG6602SVT-7 is designed for high-efficiency switching and low leakage.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.55 | $0.55 |
| 10+ | $0.34 | $0.34 |
| 25+ | $0.28 | $0.28 |
| 50+ | $0.24 | $0.24 |
| 100+ | $0.21 | $0.21 |
| 3,000+ | $0.12 | $0.12 |
| 9,000+ | $0.10 | $0.10 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage is 30V for the N-channel and -30V for the P-channel.
The package is a surface-mount TSOT-26 (also referred to as SOT-23-6 Thin).
The operating temperature range is -55°C to 150°C (junction).
Yes, it is fully RoHS 3 compliant (2011/65/EU and 2015/863/EU).
The N-channel continuous drain current is 3.4A at Vgs=10V and 2.7A at Vgs=4.5V. Pulsed drain current is 25A.