| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
50,000 pcs
|
50000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
16,020 pcs
|
16020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
15,000 pcs
|
15000 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request | |
|
12,500 pcs
|
12500 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request | |
|
2,683 pcs
|
2683 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,357 pcs
|
1357 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
17 pcs
|
17 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id | |
| Weight |
The DMG6601LVT-7 is a complementary enhancement mode MOSFET from Diodes Incorporated, integrating both N-Channel and P-Channel transistors in a single TSOT26 package. It is designed for high efficiency power management applications such as DC-DC converters and backlighting. The N-Channel MOSFET has a maximum drain-source voltage of 30V and continuous drain current of 3.8A at 25°C, while the P-Channel has -30V and -2.5A respectively. On-resistance is 55mOhm for N-Channel at Vgs=10V and 110mOhm for P-Channel at Vgs=-10V. The device features logic level gate drive and fast switching speed. It is housed in a TSOT26 surface mount package with NiPdAu over copper leadframe finish, rated MSL Level 1 and UL 94V-0 flammability. The part is RoHS3 compliant, halogen and antimony free, and qualified to AEC-Q101 for high reliability.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.55 | $0.55 |
| 10+ | $0.34 | $0.34 |
| 25+ | $0.28 | $0.28 |
| 50+ | $0.24 | $0.24 |
| 100+ | $0.21 | $0.21 |
| 3,000+ | $0.12 | $0.12 |
| 9,000+ | $0.10 | $0.10 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The N-Channel MOSFET has a maximum drain-source voltage of 30V, and the P-Channel has -30V.
It is available in a TSOT26 surface mount package (SOT-23-6 Thin, TSOT-23-6).
-55°C to 150°C (junction temperature).
Yes, it is RoHS3 compliant and lead-free per the datasheet.
Maximum 55mOhm at Vgs=10V and 65mOhm at Vgs=4.5V.
Maximum 12.3nC at Vgs=10V.
N-Channel: 3.8A at 25°C; P-Channel: 2.5A at 25°C.